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MURB2060CTR PDF预览

MURB2060CTR

更新时间: 2024-11-18 01:09:27
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 762K
描述
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

MURB2060CTR 数据手册

 浏览型号MURB2060CTR的Datasheet PDF文件第2页 
MURB2020CTR thru MURB2060CTR  
MURB2020CTR/MURB2030CTR/MURB2040CTR/MURB2060CTR  
Pb Free Plating Product  
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers  
Unit : inch (mm)  
D2PAK/TO-263  
Latest GPP EPI P/G Technology  
¬
¬
¬
¬
¬
¬
Good Soft Recovery Characteristics  
Ideally Suited for Automatic Assembly  
Low Forward Voltage  
Features  
High Surge Current Capability  
Low Leakage Current  
Freewheeling, Snubber, Clamp  
Inversion Welder  
PFC  
¬
¬
¬
¬
¬
¬
¬
Applications  
Plating Power Supply  
Ultrasonic Cleaner and Welder  
Converter & Chopper  
Case  
Case  
Case  
Case  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTR"  
Positive  
UPS/LED SMPS/HID  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
Unit  
MURB2020CTR  
MURB2030CTR MURB2040CTR MURB2060CTR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
200  
140  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 110°C  
Total Device  
Per Diode  
20  
10  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
175  
A
Forward Voltage per diode  
@IF =10 A  
VFM  
IRM  
0.98  
35  
1.30  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
5
50  
µA  
Reverse Recovery Time (Note 1)  
trr  
50  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
175  
145  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
30  
1.5  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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