MURB2020CTR thru MURB2060CTR
Pb
MURB2020CTR/MURB2030CTR/MURB2040CTR/MURB2060CTR
Pb Free Plating Product
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers
Unit : inch (mm)
D2PAK/TO-263
Latest GPP EPI P/G Technology
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Good Soft Recovery Characteristics
Ideally Suited for Automatic Assembly
Low Forward Voltage
Features
High Surge Current Capability
Low Leakage Current
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
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Applications
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
Case
Case
Case
Case
Doubler
Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Series
Negative
Common Cathode Common Anode
Suffix "CT" Suffix "CTR"
Positive
UPS/LED SMPS/HID
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Unit
MURB2020CTR
MURB2030CTR MURB2040CTR MURB2060CTR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
140
300
210
400
280
600
420
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TC = 110°C
Total Device
Per Diode
20
10
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
IFSM
175
A
Forward Voltage per diode
@IF =10 A
VFM
IRM
0.98
35
1.30
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TC = 25°C
@TC = 100°C
5
50
µA
Reverse Recovery Time (Note 1)
trr
50
nS
pF
Typical Junction Capacitance (Note 2)
CJ
175
145
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
RθJA
RθJC
30
1.5
°C/W
°C
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.