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MURB2020CTPBF PDF预览

MURB2020CTPBF

更新时间: 2024-01-21 04:45:44
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 121K
描述
Ultrafast Rectifier, 2 x 10 A FRED PtTM

MURB2020CTPBF 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.4
应用:ULTRA FAST RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:2
相数:1端子数量:2
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30

MURB2020CTPBF 数据手册

 浏览型号MURB2020CTPBF的Datasheet PDF文件第2页浏览型号MURB2020CTPBF的Datasheet PDF文件第3页浏览型号MURB2020CTPBF的Datasheet PDF文件第4页浏览型号MURB2020CTPBF的Datasheet PDF文件第5页浏览型号MURB2020CTPBF的Datasheet PDF文件第6页浏览型号MURB2020CTPBF的Datasheet PDF文件第7页 
MURB2020CTPbF/MURB2020CT-1PbF  
Vishay High Power Products  
Ultrafast Rectifier,  
2 x 10 A FRED PtTM  
FEATURES  
MURB2020CT-1PbF  
MURB2020CTPbF  
• Ultrafast recovery time  
Available  
• Low forward voltage drop  
RoHS*  
• Low leakage current  
COMPLIANT  
• 175 °C operating junction temperature  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for AEC Q101 level  
Base  
common  
cathode  
2
Base  
common  
cathode  
2
DESCRIPTION/APPLICATIONS  
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance of  
forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time control,  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
3
3
2
2
1
1
Anode  
1
Anode  
1
Anode  
2
Anode  
2
Common  
cathode  
Common  
cathode  
D2PAK  
TO-262  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr  
IF(AV)  
VR  
25 ns  
2 x 10 A  
200 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
200  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per leg  
Average rectified forward current  
total device  
10  
IF(AV)  
Rated VR, TC = 145 °C  
20  
A
Non-repetitive peak surge current per leg  
Peak repetitive forward current per leg  
Operating junction and storage temperatures  
IFSM  
IFM  
100  
Rated VR, square wave, 20 kHz, TC = 145 °C  
20  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
200  
-
-
IF = 8 A, TJ = 125 °C  
IF = 16 A  
-
-
-
-
-
-
-
-
-
0.85  
1.15  
1.05  
15  
V
Forward voltage  
VF  
IF = 16 A, TJ = 125 °C  
VR = VR rated  
-
-
Reverse leakage current  
IR  
µA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
250  
-
Junction capacitance  
Series inductance  
CT  
LS  
55  
8.0  
pF  
nH  
Measured lead to lead 5 mm from package body  
-
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94083  
Revision: 05-Sep-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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