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MURB2020CTTR PDF预览

MURB2020CTTR

更新时间: 2024-11-26 13:01:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 116K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, D2PAK-3

MURB2020CTTR 技术参数

生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.17
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT, FREE WHEELING DIODE, SNUBBER DIODE
应用:ULTRA FAST RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大非重复峰值正向电流:100 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MURB2020CTTR 数据手册

 浏览型号MURB2020CTTR的Datasheet PDF文件第2页浏览型号MURB2020CTTR的Datasheet PDF文件第3页浏览型号MURB2020CTTR的Datasheet PDF文件第4页浏览型号MURB2020CTTR的Datasheet PDF文件第5页浏览型号MURB2020CTTR的Datasheet PDF文件第6页浏览型号MURB2020CTTR的Datasheet PDF文件第7页 
MURB2020CT/MURB2020CT-1  
Vishay High Power Products  
Ultrafast Rectifier,  
2 x 10 A FRED PtTM  
FEATURES  
• Ultrafast recovery time  
MURB2020CT-1  
MURB2020CT  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Designed and qualified for industrial level  
Base  
common  
cathode  
2
Base  
common  
cathode  
2
DESCRIPTION/APPLICATIONS  
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance of  
forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time control,  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
3
3
2
2
1
1
Anode  
1
Anode  
1
Anode  
2
Anode  
2
Common  
cathode  
Common  
cathode  
D2PAK  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
TO-262  
PRODUCT SUMMARY  
trr  
IF(AV)  
VR  
25 ns  
2 x 10 A  
200 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
200  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per leg  
Average rectified forward current  
total device  
10  
IF(AV)  
Rated VR, TC = 145 °C  
20  
A
Non-repetitive peak surge current per leg  
Peak repetitive forward current per leg  
Operating junction and storage temperatures  
IFSM  
IFM  
100  
Rated VR, square wave, 20 kHz, TC = 145 °C  
20  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
200  
-
-
IF = 8 A, TJ = 125 °C  
IF = 16 A  
-
-
-
-
-
-
-
-
-
0.85  
1.15  
1.05  
15  
V
Forward voltage  
VF  
IF = 16 A, TJ = 125 °C  
VR = VR rated  
-
-
Reverse leakage current  
IR  
µA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
250  
-
Junction capacitance  
Series inductance  
CT  
LS  
55  
8.0  
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 93915  
Revision: 28-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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