Datasheet > MURB2010CT

MURB2010CT

更新时间： 2024-11-02 01:20:47

品牌	Logo	应用领域
圣诺 - SENO		二极管
页数	文件大小	规格书
2页	165K
描述
20.0A GLASS PASSIVATED SUPER FAST RECTIFIER

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中文翻译

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数据手册

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MURB2010CT 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

MURB2010CT-MURB2060CT

20.0A GLASS PASSIVATED SUPER FAST RECTIFIER

Features

Glass Passivated Die Construction

Super-Fast Switching

TO-263 (D²PAK)

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

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Mechanical Data

Case: TO-263(D²PAK), Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MURB

UNIT

Characterisic

SYMBOL

2010CT 2020CT 2030CT 2040CT 2050CT 2060CT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified

Current TC=100^oC

20.0

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

@10.0 A

1.0

1.3

1.7

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

10.0

250

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

^oCW

130

170

R JC

3.5

Operating Junction and Storage

Temperature Range

^oC

-55 to +150

TJ, TSTG

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

MURB2010CT-MURB2060CT

www.senocn.com

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