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MUR4100 PDF预览

MUR4100

更新时间: 2024-11-23 20:07:55
品牌 Logo 应用领域
扬杰 - YANGJIE 功效二极管
页数 文件大小 规格书
4页 468K
描述
Rectifier Diode, 1 Phase, 1 Element, 4A, 1000V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

MUR4100 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:O-PALF-W2Reach Compliance Code:unknown
风险等级:5.66其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.85 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V最大反向电流:5 µA
最大反向恢复时间:0.075 µs表面贴装:NO
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MUR4100 数据手册

 浏览型号MUR4100的Datasheet PDF文件第2页浏览型号MUR4100的Datasheet PDF文件第3页浏览型号MUR4100的Datasheet PDF文件第4页 
RoHS  
MUR420 THRU MUR4100  
Super Fast Rectifier  
COMPLIANT  
Features  
Ultrafast reverse recovery time  
Low leakage current  
Low switching losses, high efficiency  
High forward surge capability  
Glass passivated chip junction  
Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters  
for consumer, computer and telecommunication.  
Mechanical Data  
ackage: DO-201AD(DO-27)  
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
P
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Color band denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified)  
Maximum Ratings  
a
MUR420  
MUR420  
200  
MUR440  
MUR440  
400  
MUR460  
MUR460  
600  
MUR480  
MUR480  
800  
MUR4100  
MUR4100  
1000  
PARAMETER  
SYMBOL  
UNIT  
Device marking code  
VRRM  
V
A
Repetitive Peak Reverse Voltage  
Average Forward Current  
@60Hz sine wave, Resistance load, Ta =50  
IF(AV)  
4.0  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Ta=25℃  
IFSM  
A
125  
T
-55 ~+150  
-55~+150  
Storage Temperature  
Junction Temperature  
stg  
T
j
(T =25Unless otherwise specified)  
Electrical Characteristics  
a
MUR420  
MUR440  
MUR460  
MUR480 MUR4100  
PARAMETER  
SYMBOL  
UNIT  
TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per diode  
V
F
IFM=4.0A  
V
0.89  
1.28  
1.85  
T =25℃  
5
a
Maximum DC reverse current  
at rated DC blocking voltage  
per diode  
I
μA  
R
T =100℃  
a
150  
IF=0.5A IR=1A  
IRR=0.25A  
Reverse Recovery time  
t
rr  
ns  
25  
50  
75  
Measured at 1MHZ  
and Applied Reverse  
Voltage of 4.0 V.D.C.  
Typical junction capacitance  
Cj  
pF  
70  
1 / 4  
S-A114  
Rev.2.2, 28-Apr-14  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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