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MUR210G

更新时间： 2024-02-25 16:43:17
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管超快速恢复能力电源超快恢复二极管快速恢复二极管
页数 文件大小 规格书
5页 55K
描述
SWITCHMODE TM Power Rectifier

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中文翻译

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MUR210G 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
风险等级：5.72Is Samacsys：N
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用：ULTRA FAST RECOVERY POWER
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED最大非重复峰值正向电流：35 A
元件数量：1相数：1
端子数量：2最大输出电流：2 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
认证状态：COMMERCIAL最大重复峰值反向电压：100 V
最大反向恢复时间：0.03 µs表面贴装：NO
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

MUR210G 数据手册

 浏览型号MUR210G的Datasheet PDF文件第2页浏览型号MUR210G的Datasheet PDF文件第3页浏览型号MUR210G的Datasheet PDF文件第4页浏览型号MUR210G的Datasheet PDF文件第5页 
MUR210  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
SWITCHMODE power rectifiers are state−of−the−art devices that  
are designed for use in switching power supplies, inverters and as free  
wheeling diodes.  
http://onsemi.com  
Features  
ULTRAFAST RECTIFIERS  
2 AMPERES, 100 VOLTS  
• Ultrafast 20 Nanosecond Recovery Times  
• 175°C Operating Junction Temperature  
• Low Forward Voltage  
• Low Leakage Current  
• High Temperature Glass Passivated Junction  
• These are Pb−Free Devices*  
Mechanical Characteristics  
• Case: Epoxy, Molded  
• Weight: 0.4 Gram (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
DO−41  
PLASTIC  
AXIAL LEAD  
CASE 59  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
220°C Max for 10 Seconds, 1/16″ from Case  
• Polarity: Cathode Indicated by Polarity Band  
MAXIMUM RATINGS  
MARKING DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
100  
−
V
RRM  
A
V
RWM  
V
MUR210  
YYWW G  
G
R
Average Rectified Forward Current  
(Square Wave Mounting Method #3)  
(Note 1)  
I
2.0 @  
T = 100°C  
A
A
F(AV)  
A
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Non-Repetitive Peak Surge Current  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz)  
I
35  
FSM  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Operating Junction Temperature and  
Storage Temperature Range  
T , T  
J
−65 to +175  
°C  
stg  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Characteristic  
†
Device  
MUR210  
Package  
Shipping  
Symbol  
Value  
Unit  
Axial Lead*  
1000 Units/Bag  
Maximum Thermal Resistance,  
Junction−to−Ambient  
R
See Note 3 °C/W  
q
JA  
MUR210G  
Axial Lead*  
Axial Lead*  
Axial Lead*  
1000 Units/Bag  
5000/Tape & Reel  
5000/Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MUR210RL  
MUR210RLG  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.  
*This package is inherently Pb−Free.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 1  
MUR210/D  
 
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中文翻译

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MUR210G 替代型号

型号 品牌 替代类型 描述 数据表
1N4935-T DIODES

功能相似

 1.0A FAST RECOVERY RECTIFIER
MUR210RLG ONSEMI

类似代替

 SWITCHMODE TM Power Rectifier
MUR210RL ONSEMI

完全替代

 SWITCHMODEE Power Rectifier

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