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MUR2100E

更新时间： 2024-01-09 21:46:35
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管局域网超快速恢复能力电源超快恢复二极管快速恢复二极管
页数 文件大小 规格书
6页 52K
描述
Ultrafast “E” Series with High Reverse Energy Capability

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MUR2100E 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-41包装说明：O-PALF-W2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：1 week风险等级：0.92
其他特性：FREE WHEELING DIODE应用：ULTRA FAST RECOVERY POWER
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2.2 VJEDEC-95代码：DO-41
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值正向电流：35 A元件数量：1
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：2 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：1000 V最大反向恢复时间：0.1 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

MUR2100E 数据手册

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MUR2100E  
Preferred Device  
SWITCHMODE  
Power Rectifier  
Ultrafast “E” Series with High Reverse  
Energy Capability  
http://onsemi.com  
. . . designed for use in switching power supplies, inverters and as  
free wheeling diodes, these state−of−the−art devices have the  
following features:  
ULTRAFAST  
RECTIFIER  
2 AMPS  
• 20 mjoules Avalanche Energy Guaranteed  
• Excellent Protection Against Voltage Transients in Switching  
Inductive Load Circuits  
1000 VOLTS  
• Ultrafast 75 Nanosecond Recovery Time  
• 175°C Operating Junction Temperature  
• Low Forward Voltage  
• Low Leakage Current  
• High Temperature Glass Passivated Junction  
• These are Pb−Free Devices  
Mechanical Characteristics  
• Case: Epoxy, Molded  
• Weight: 0.4 gram (approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
220°C Max. for 10 Seconds, 1/16″ from case  
AXIAL LEAD  
PLASTIC  
• Polarity: Cathode Indicated by Polarity Band  
CASE 059  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
1000  
V
RRM  
RWM  
MUR  
2100E  
R
Average Rectified Forward Current  
(Note 1)  
I
2.0 @  
T = 35°C  
A
A
A
F(AV)  
MUR2100E = Device Code  
Non-Repetitive Peak Surge Current  
I
35  
FSM  
(Surge applied at rated load conditions,  
halfwave, single phase, 60 Hz)  
ORDERING INFORMATION  
Operating Junction Temperature and  
Storage Temperature Range  
T , T  
−65 to  
+175  
°C  
J
stg  
†
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
MUR2100E  
Axial Lead  
(Pb−Free)  
1000 Units/Bag  
Symbol  
Value  
Unit  
Maximum Thermal Resistance, Junc-  
tion−to−Ambient  
R
(Note 1)  
°C/W  
q
MUR2100ERL  
Axial Lead  
(Pb−Free)  
5000/Tape & Reel  
JA  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 4  
MUR2100E/D  
 
123456

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