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MUR2100ERLG

更新时间： 2024-02-14 04:13:35
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关超快速恢复能力电源超快恢复二极管快速恢复二极管
页数 文件大小 规格书
5页 66K
描述
SWITCHMODE Power Rectifier Ultrafast “E” Series with High Reverse Energy Capability

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MUR2100ERLG 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DO-41包装说明：O-PALF-W2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：1 week风险等级：0.92
其他特性：FREE WHEELING DIODE应用：ULTRA FAST RECOVERY POWER
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2.2 VJEDEC-95代码：DO-41
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值正向电流：35 A元件数量：1
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：2 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：1000 V最大反向恢复时间：0.1 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

MUR2100ERLG 数据手册

 浏览型号MUR2100ERLG的Datasheet PDF文件第2页浏览型号MUR2100ERLG的Datasheet PDF文件第3页浏览型号MUR2100ERLG的Datasheet PDF文件第4页浏览型号MUR2100ERLG的Datasheet PDF文件第5页 
MUR2100E  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
Ultrafast “E” Series with High Reverse  
Energy Capability  
http://onsemi.com  
These state−of−the−art devices are designed for use in switching  
power supplies, inverters and as free wheeling diodes.  
ULTRAFAST RECTIFIER  
Features  
2.0 AMPERES, 1000 VOLTS  
• 20 mjoules Avalanche Energy Guaranteed  
• Excellent Protection Against Voltage Transients in Switching  
Inductive Load Circuits  
• Ultrafast 75 Nanosecond Recovery Time  
• 175°C Operating Junction Temperature  
• Low Forward Voltage  
• Low Leakage Current  
• High Temperature Glass Passivated Junction  
• These are Pb−Free Devices*  
Mechanical Characteristics:  
• Case: Epoxy, Molded  
PLASTIC  
AXIAL LEAD  
CASE 59  
• Weight: 0.4 Gram (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead Temperature for Soldering Purposes:  
MARKING DIAGRAM  
260°C Max for 10 Seconds  
• Polarity: Cathode Indicated by Polarity Band  
MAXIMUM RATINGS  
A
MUR2100E  
YYWW G  
G
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
1000  
V
RRM  
V
RWM  
V
R
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Average Rectified Forward Current (Note 1)  
I
2.0 @  
T = 35°C  
A
A
A
F(AV)  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Non-Repetitive Peak Surge Current  
(Surge applied at rated load conditions,  
halfwave, single phase, 60 Hz)  
I
35  
FSM  
ORDERING INFORMATION  
Operating Junction Temperature and  
Storage Temperature Range  
T , T  
−65 to  
+175  
°C  
J
stg  
†
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
MUR2100E  
MUR2100EG  
MUR2100ERL  
Axial Lead**  
Axial Lead**  
1000 Units/Bag  
1000 Units/Bag  
Symbol  
Value  
Unit  
Maximum Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
(Note 3)  
°C/W  
Axial Lead** 5000/Tape & Reel  
MUR2100ERLG Axial Lead** 5000/Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
**This package is inherently Pb−Free.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 6  
MUR2100E/D  
 
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