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MUR2040CT

更新时间： 2024-11-13 02:58:15
品牌 Logo 应用领域
THINKISEMI 局域网功效二极管
页数 文件大小 规格书
2页 590K
描述
Dual Common Anode Ultra Fast Recovery Diodes

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MUR2040CT 数据手册

 浏览型号MUR2040CT的Datasheet PDF文件第2页 
MUR2020CTA thru MUR2060CTA  
®
MUR2020CTA thru MUR2060CTA  
Pb Free Plating Product  
20.0 Ampere Dual Common Anode Ultra Fast Recovery Diodes  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.139(3.55)  
MIN  
¬ Fast switching for high efficiency  
¬ Low forward voltage drop  
¬ High current capability  
¬ Low reverse leakage current  
¬ High surge current capability  
.054(1.39)  
.045(1.15)  
Mechanical Data  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
¬ Case: TO-220AB Heatsink  
¬ Epoxy: UL 94V-0 rate flame retardant  
¬ Terminals: Solderable per MIL-STD-202  
method 208  
.1(2.54)  
.1(2.54)  
¬ Polarity: As marked on body  
¬ Mounting position: Any  
¬ Weight: 2.24 gram approximately  
Case  
Case  
Case  
Doubler  
Negative  
Common Anode  
Suffix "CTA"  
Positive  
Common Cathode  
Tandem Polarity  
Suffix "CTD"  
Suffix "CT"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MUR2060CT  
MUR2060CTA  
MUR2060CTD  
MUR2020CT MUR2040CT  
UNIT  
SYMBOL  
MUR2020CTA MUR2040CTA  
MUR2020CTD MUR2040CTD  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current TC=125oC  
20.0  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
200  
175  
Maximum Instantaneous Forward Voltage  
@ 10.0 A  
VF  
IR  
0.975  
1.3  
1.5  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
10.0  
250  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
35  
pF  
oC  
120  
70  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions I  
F
= 0.5A, I  
R
= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.04  
© 2006 Thinki Semiconductor Co.,Ltd.  
12

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