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MUR2040GD PDF预览

MUR2040GD

更新时间： 2024-11-12 12:57:39
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 703K
描述
20.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers

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MUR2040GD 数据手册

 浏览型号MUR2040GD的Datasheet PDF文件第2页 
MUR2020GD thru MUR2060GD  
MUR2020GD/MUR2040GD/MUR2060GD  
Pb Free Plating Product  
20.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
.1(2.54)  
.1(2.54)  
Case  
Case  
Case  
Case  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.2 gram approximately  
Doubler  
Series  
Negative  
Positive  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "GS" Suffix "GD"  
Suffix "GC"  
Suffix "GA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
℃
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
MUR2020GD  
MUR2040GD  
MUR2060GD  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
20.0  
200  
1.3  
A
A
V
IF(AV)  
℃
(Total Device 2x10A=20A)  
Current TC  
=125  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
Maximum Instantaneous Forward Voltage  
V
F
0.98  
120  
1.7  
(Per Diode/Per Leg)  
@ 10.0 A  
5.0  
100  
μA  
μA  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25  
℃
℃
I
R
J
=125  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
C
J
70  
R
JC  
2.0  
℃
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
℃
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR = 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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