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MUR1660CTD PDF预览

MUR1660CTD

更新时间: 2024-11-18 12:54:59
品牌 Logo 应用领域
THINKISEMI 二极管高压局域网超快恢复二极管高压超快恢复二极管快速恢复二极管
页数 文件大小 规格书
2页 229K
描述
16.0 Ampere Heatsink Dual Doubler Tandem Ultra Fast Recovery Rectifier

MUR1660CTD 数据手册

 浏览型号MUR1660CTD的Datasheet PDF文件第2页 
MUR1620CTD thru MUR1660CTD  
®
MUR1620CTD thru MUR1660CTD  
Pb Free Plating Product  
16.0 Ampere Heatsink Dual Doubler Tandem Ultra Fast Recovery Rectifier  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters/Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB  
.1(2.54)  
.1(2.54)  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.2 gram approximately  
Doubler  
Negative  
Positive  
Common Cathode Common Anode Tandem Polarity  
Suffix "CT" Suffix "CTA" Suffix "CTD"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL MUR1620CTD MUR1640CTD MUR1660CTD  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
16.0  
A
A
V
IF(AV)  
Current T  
C
=100oC  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
175  
150  
Maximum Instantaneous Forward Voltage  
@ 8.0 A  
V
F
0.98  
1.3  
1.7  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25oC  
uA  
uA  
nS  
10.0  
250  
I
R
J
=125oC  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
pF  
oCW  
C
J
R
JC  
2.2  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to + 150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.04/2014  
© 2006 Thinki Semiconductor Co.,Ltd.  

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