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MUR115 PDF预览

MUR115

更新时间: 2024-11-02 20:25:31
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
3页 1884K
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MUR115 技术参数

Case Style:DO-41/DO-15IF(A):1
VRRM (V):150IFSM (A):35
VF (V):0.875@ IF (A):1
Maximum reverse current:2TRR(nS):25
class:Diodes

MUR115 数据手册

 浏览型号MUR115的Datasheet PDF文件第2页浏览型号MUR115的Datasheet PDF文件第3页 
MUR105-MUR160  
Super Fast Rectifiers  
VOLTAGE RANGE: 50 --- 600 V  
CURRENT: 1.0 A  
DO - 41  
Features  
Low cost  
Low leakage  
Low forward voltage drop  
High current capability  
Easily cleaned with alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Case:JEDEC DO--41,molded plastic  
Polarity: Color band denotes cathode  
Weight: 0.012 ounces,0.34 grams  
Mounting position: Any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
MUR  
105  
MUR MUR MUR MUR MUR MUR MUR  
UNITS  
110  
115  
120  
130  
140  
150  
160  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
Maximum average forw ard rectified current  
1.0  
A
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
IFSM  
35.0  
A
8.3ms single half-sine-w ave  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 1.0A  
0.875  
1.25  
VF  
IR  
V
A
Maximum reverse current  
@TA=25  
2.0  
50  
25  
5.0  
150  
50  
at rated DC blocking voltage @TA=100  
Maximum reverse recovery time (Note1)  
ns  
pF  
/W  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
22  
CJ  
50  
Rθ  
JA  
Operating junction temperature range  
- 55 ----- + 150  
- 55 ----- + 150  
TJ  
Storage temperature range  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.  
3. Thermal resistance f rom junction to ambient.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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