Datasheet > MUN5212DW1

MUN5212DW1

更新时间： 2024-02-10 00:44:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	155K
描述
Dual NPN Bias Resistor Transistors R1 = 22 k, R2 = 22 k

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MUN5212DW1 数据手册

MUN5212DW1,

NSBC124EDXV6,

NSBC124EDP6

Dual NPN Bias Resistor

Transistors

R1 = 22 kW, R2 = 22 kW

http://onsemi.com

PIN CONNECTIONS

(2)

NPN Transistors with Monolithic Bias

Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(4)

(5)

(6)

 Simplifies Circuit Design

 Reduces Board Space

 Reduces Component Count

 S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

MARKING DIAGRAMS

SOT−363

CASE 419B

7B M G

 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

(T = 25C, common for Q and Q , unless otherwise noted)

SOT−563

CASE 463A

7B M G

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

R M G

SOT−963

CASE 527AD

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

7B/R

Specific Device Code

Date Code*

Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

*Date Code orientation may vary depending

upon manufacturing location.

†

Device

Package

Shipping

MUN5212DW1T1G,

NSVMUN5212DW1T1G

SOT−363

3,000/Tape & Reel

NSBC124EDXV6T1G

NSBC124EDXV6T5G

NSBC124EDP6T5G

SOT−563

SOT−963

4,000/Tape & Reel

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

September, 2012 − Rev. 0

DTC124ED/D

12 3 4 5 6 7 8

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与MUN5212DW1相关器件

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MUN5212DW1T1	ETL	获取价格	Dual Bias ResistorTransistors
MUN5212DW1T1	MOTOROLA	获取价格	Dual Bias Resistor Trasnsistors
MUN5212DW1T1	LRC	获取价格	Dual Bias Resistor Transistors
MUN5212DW1T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5212DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5212DW1T2	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MUN5212DW1T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, CASE 41
MUN5212DW-G	WEITRON	获取价格	Transistor
MUN5212T1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5212T1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS

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