Datasheet > MUN5212DW-G

MUN5212DW-G

更新时间： 2024-01-18 22:24:50

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WEITRON		/
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6页	144K
描述
Transistor

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技术参数
数据手册

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MUN5212DW-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

MUN5212DW-G 数据手册

MUN5211DW Series

Surface Mount Dual Bias Resistor Transistor

NPN Silicon

* “G” Lead(Pb)-Free

SOT-363(SC-88)

NPN+NPN

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Collector Current

Symbol

Value

Unit

Vdc

CEO

CBO

100

mAdc

Thermal Characteristics

(1)

Characteristics

Symbol

Max

Unit

(2)

(3)

(2)

187

256

1.5

Total Device Dissipation TA=25 C

mW/ C

2.0 (3)

670(2)

490(3)

C/W

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

-55 to +150

J,Tstg

1.One Junction Heated

2.FR-4 @ Minimum Pad

3.FR-4 @ 1.0 1.0 Inch Pad

Device Marking and Resistor Values

Device

Marking

R1(K)

R2(K)

Device

Marking

R1(K)

R2(K)

4.7

MUN5211DW

2.2

4.7

2.2

100

MUN5231DW

2.2

MUN5212DW

MUN5213DW

MUN5214DW

MUN5215DW

MUN5216DW

MUN5230DW

4.7

100

MUN5232DW

MUN5233DW

MUN5234DW

MUN5235DW

MUN5236DW

MUN5237DW

1.0

WEITRON

http://www.weitron.com.tw

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