Datasheet > MUN5213

MUN5213

更新时间： 2024-11-14 22:45:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
20页	155K
描述
Dual Bias Resistor Transistors

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中文翻译

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MUN5213 数据手册

MUN5211DW1T1 Series

Preferred Devices

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the MUN5211DW1T1 series,

two BRT devices are housed in the SOT−363 package which is ideal

for low power surface mount applications where board space is at a

premium.

(3)

(2)

(1)

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

SOT−363

CASE 419B

STYLE 1

MAXIMUM RATINGS

(T = 25°C unless otherwise noted, common for Q and Q )

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

CBO

CEO

MARKING DIAGRAM

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

XX= Specific Device Code

Total Device Dissipation

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

= Date Code

= (See Page 2)

T = 25°C

Derate above 25°C

mW/°C

°C/W

Thermal Resistance −

Junction-to-Ambient

670 (Note 1.)

490 (Note 2.)

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Preferred devices are recommended choices for future use

and best overall value.

T = 25°C

Derate above 25°C

mW/°C

°C/W

°C

Thermal Resistance −

Junction-to-Ambient

493 (Note 1.)

325 (Note 2.)

Thermal Resistance −

Junction-to-Lead

188 (Note 1.)

208 (Note 2.)

Junction and Storage Temperature T , T

−55 to +150

stg

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

December, 2003 − Rev. 5

MUN5211DW1T1/D

12 3 4 5 6 7...20

中文翻译

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与MUN5213相关器件

型号	品牌	获取价格	描述	数据表
MUN5213DW	WEITRON	获取价格	Surface Mount Dual Bias Resistor Transistor NPN Silicon
MUN5213DW1	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K
MUN5213DW1T1	ETL	获取价格	Dual Bias ResistorTransistors
MUN5213DW1T1	LRC	获取价格	Dual Bias Resistor Transistors
MUN5213DW1T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5213DW1T1	MOTOROLA	获取价格	Dual Bias Resistor Trasnsistors
MUN5213DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5213DW1T2	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
MUN5213DW1T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, CASE 41
MUN5213DW1T3G	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors R1 = 47 K , R2 = 47 K

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