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MUN5111DW1T1 PDF预览

MUN5111DW1T1

更新时间: 2024-02-26 12:29:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
12页 219K
描述
Dual Bias Resistor Transistors

MUN5111DW1T1 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-88包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.95Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):35JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MUN5111DW1T1 数据手册

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Order this document  
by MUN5111DW1T1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon Surface Mount Transistors with  
Monolithic Bias Resistor Network  
Motorola Preferred Devices  
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic  
bias network consisting of two resistors; a series base resistor and a base–emitter  
resistor. These digital transistors are designed to replace a single device and its  
external resistor bias network. The BRT eliminates these individual components by  
integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices  
are housed in the SOT–363 package which is ideal for low–power surface mount  
applications where board space is at a premium.  
6
5
4
1
2
3
CASE 419B–01, STYLE 1  
SOT–363  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
(3)  
(2)  
R
(1)  
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.  
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q and Q )  
A
1
2
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
Collector–Base Voltage  
Collector–Emitter Voltage  
Collector Current  
V
V
CBO  
–50  
Vdc  
CEO  
I
C
–100  
mAdc  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction–to–Ambient (surface mounted)  
Operating and Storage Temperature Range  
R
833  
°C/W  
°C  
θJA  
T , T  
J
65 to +150  
*150  
stg  
(1)  
Total Package Dissipation @ T = 25°C  
P
mW  
A
D
DEVICE MARKING AND RESISTOR VALUES: MUN5111DW1T1 SERIES  
Device  
Marking  
R1 (K)  
R2 (K)  
MUN5111DW1T1  
MUN5112DW1T1  
MUN5113DW1T1  
MUN5114DW1T1  
MUN5115DW1T1  
0A  
0B  
0C  
0D  
0E  
0F  
0G  
0H  
0J  
10  
22  
47  
10  
10  
10  
22  
47  
47  
(2)  
(2)  
MUN5116DW1T1  
MUN5130DW1T1  
MUN5131DW1T1  
MUN5132DW1T1  
MUN5133DW1T1  
MUN5134DW1T1  
MUN5135DW1T1  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
1.0  
2.2  
4.7  
47  
47  
47  
0K  
0L  
0M  
2.2  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New resistor combinations. Updated curves to follow in subsequent data sheets.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1997  

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