Datasheet > MUN5111-G

MUN5111-G

更新时间： 2024-02-08 10:04:37

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WEITRON		/
页数	文件大小	规格书
6页	123K
描述
Transistor

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技术参数
数据手册

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MUN5111-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

MUN5111-G 数据手册

MUN5111 Series

COLLECTOR

Bias Resistor Transistor

PNP Silicon

BASE

* “G” Lead(Pb)-Free

SOT-323(SC-70)

EMITTER

( T =25 C unless otherwise noted)

M aximum R atings

Rating

Collector-Emitter Voltage

Symbol

Value

Unit

Vdc

CEO

Collector-Base Voltage

CBO

Collector Current-Continuous

mAdc

100

Thermal Characteristics

Max

Unit

Characteristics

Symbol

Total Device Dissipation FR-5 Board

202

310

(1)

(2)

(1)

(1)T =25 C

Derate above 25 C

1.6

mW/ C

2.5 (2)

618

403

C/W

Thermal Resistance, Junction to Ambient

(1)

Junction and Storage,Temperature Range

-55 to +150

J,Tstg

1.FR-4 @ minimum pad

2.FR-4 @ 1.0 1.0 inch Pad

Device Marking and Resistor Values

Device

Marking

R1(K)

R2(K)

Device

Marking

R1(K)

R2(K)

MUN5111

2.2

4.7

MUN5131

2.2

MUN5112

MUN5113

MUN5114

MUN5115

MUN5116

MUN5130

4.7

100

MUN5132

MUN5133

MUN5134

MUN5135

MUN5136

MUN5137

2.2

4.7

1.0

100

1.0

WEITR O N

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