MUN2116T1

更新时间： 2024-01-23 01:39:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
12页	160K
描述
Bias Resistor Transistor

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MUN2116T1 数据手册

MUN2111T1 Series

Preferred Devices

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The

Bias Resistor Transistor (BRT) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. The BRT eliminates these

individual components by integrating them into a single device. The

use of a BRT can reduce both system cost and board space. The device

is housed in the SC−59 package which is designed for low power

surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: Class 1

ESD Rating − Machine Model: Class B

http://onsemi.com

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

BASE

(INPUT)

PIN 1

EMITTER

(GROUND)

• The SC−59 package can be soldered using wave or reflow.

The modified gull−winged leads absorb thermal stress during

soldering eliminating the possibility of damage to the die.

• Pb−Free Package is Available

SC−59

CASE 318D

PLASTIC

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

Vdc

6x M

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

6x = Specific Device Code*

M = Date Code

Total Device Dissipation

230 (Note 1)

338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

T = 25°C

Derate above 25°C

°C/W

°C

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Thermal Resistance −

Junction−to−Ambient

540 (Note 1)

370 (Note 2)

DEVICE MARKING INFORMATION

*See device marking table on page 2 of this data sheet.

Thermal Resistance −

Junction−to−Lead

264 (Note 1)

287 (Note 2)

Junction and Storage

Temperature Range

T , T

−55 to +150

stg

Preferred devices are recommended choices for future use

and best overall value.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 inch Pad.



Semiconductor Components Industries, LLC, 2005

Publication Order Number:

January, 2005 − Rev. 14

MUN2111T1/D

12 3 4 5 6 7...12

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MUN2116T1 替代型号

型号	品牌	替代类型	描述	数据表
MMUN2115LT1G	ONSEMI	功能相似	PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
MUN2115T1G	ONSEMI	功能相似	Bias Resistor Transistors

与MUN2116T1相关器件

型号	品牌	获取价格	描述	数据表
MUN2116T1G	ONSEMI	获取价格	Bias Resistor Transistor
MUN2116T3	ONSEMI	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
MUN2130	WEITRON	获取价格	Bias Resistor Transistor PNP Silicon
MUN2130	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 1 k, R2 = 1 k
MUN2130RT1	ETL	获取价格	Bias Resistor Transistor
MUN2130RT1	LRC	获取价格	Bias Resistor Transistor
MUN2130T1	MOTOROLA	获取价格	PNP SILICON BIAS RESISTOR TRANSISTOR
MUN2130T1	ONSEMI	获取价格	Bias Resistor Transistor
MUN2130T1G	ONSEMI	获取价格	Bias Resistor Transistors
MUN2131	WEITRON	获取价格	Bias Resistor Transistor PNP Silicon

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