Datasheet > MUN2131RT1

MUN2131RT1

更新时间： 2024-11-06 22:10:23

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
7页	305K
描述
Bias Resistor Transistor

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中文翻译

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技术参数
数据手册

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MUN2131RT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Is Samacsys：	N	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	8	元件数量：	1
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

MUN2131RT1 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with

Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and

its external resistor bias network. The BRT (Bias Resistor Transistor) contains a

single transistor with a monolithic bias network consisting of two resistors; a series

base resistor and a base–emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SC–59 package

which is designed for low power surface mount applications.

• Simplifies Circuit Design

MUN2111RT1

MUN2112RT1

MUN2113RT1

MUN2114RT1

MUN2115RT1

MUN2116RT1

MUN2130RT1

MUN2131RT1

MUN2132RT1

MUN2133RT1

MUN2134RT1

• Reduces Board Space

• Reduces Component Count

• The SC–59 package can be soldered using wave or reflow.

The modified gull–winged leads absorb thermal stress during

soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel

PNP SILICON

BIAS RESISTOR

TRANSISTOR

Use the Device Number to order the 7 inch/3000 unit reel.

PIN3

Collector

PIN2

base

(Output)

(Input)

PIN2

Emitter

(Ground)

CASE 318–03 , STYLE 1

( SC – 59 )

MAXIMUM RATINGS (T _A= 25°C unless otherwise noted)

Rating

Symbol

V_CBO

V _CEO

I_C

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Vdc

Collector Current

Total Power Dissipation @ T _A= 25°C ⁽¹⁾

100

200

1.6

mAdc

P _D

Derate above 25°C

mW/°C

THERMALCHARACTERISTICS

Rating

Symbol

R _{θ JA}

Value

625

Unit

°C/W

°C

Thermal Resistance — Junction-to-Ambient (surface mounted)

Operating and Storage Temperature Range

Maximum Temperature for Soldering Purposes

Time in Solder Bath

T _J, T _stg

–65 to +150

260

°C

T _L

Sec

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

MUN2111RT1

MUN2112RT1

MUN2113RT1

MUN2114RT1

MUN2115RT1⁽²⁾

MUN2116RT1⁽²⁾

MUN2130RT1⁽²⁾

MUN2131RT1⁽²⁾

MUN2132RT1⁽²⁾

MUN2133RT1⁽²⁾

MUN2134R T1⁽²⁾

4.7

1.0

2.2

4.7

1.0

2.2

4.7

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2. New devices. Updated curves to follow in subsequent data sheets.

P1–1/7

12 3 4 5 6 7

中文翻译

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与MUN2131RT1相关器件

型号	品牌	获取价格	描述	数据表
MUN2131T1	ONSEMI	获取价格	Bias Resistor Transistor
MUN2131T1	MOTOROLA	获取价格	PNP SILICON BIAS RESISTOR TRANSISTOR
MUN2131T1G	ONSEMI	获取价格	Bias Resistor Transistors
MUN2132	WEITRON	获取价格	Bias Resistor Transistor PNP Silicon
MUN2132	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
MUN2132RT1	ETL	获取价格	Bias Resistor Transistor
MUN2132RT1	LRC	获取价格	Bias Resistor Transistor
MUN2132T1	MOTOROLA	获取价格	PNP SILICON BIAS RESISTOR TRANSISTOR
MUN2132T1	ONSEMI	获取价格	Bias Resistor Transistor
MUN2132T1G	ONSEMI	获取价格	Bias Resistor Transistor

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