是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SC-59 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 0.58 | Is Samacsys: | N |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.338 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SMUN2113T1 | ONSEMI |
完全替代 |
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318D-04, SC-59, 3 | |
MUN2113T1 | ONSEMI |
完全替代 |
Bias Resistor Transistor | |
MMUN2113LT1G | ONSEMI |
类似代替 |
PNP Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MUN2114T3 | ONSEMI |
获取价格 |
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN | |
MUN2115 | ONSEMI |
获取价格 |
Digital Transistors (BRT) R1 = 10 k, R2 = k | |
MUN2115 | WEITRON |
获取价格 |
Bias Resistor Transistor PNP Silicon | |
MUN2115RT1 | ETL |
获取价格 |
Bias Resistor Transistor | |
MUN2115RT1 | LRC |
获取价格 |
Bias Resistor Transistor | |
MUN2115T1 | MOTOROLA |
获取价格 |
PNP SILICON BIAS RESISTOR TRANSISTOR | |
MUN2115T1 | ONSEMI |
获取价格 |
Bias Resistor Transistor | |
MUN2115T1G | ONSEMI |
获取价格 |
Bias Resistor Transistors | |
MUN2115T3 | ONSEMI |
获取价格 |
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN, BIP General Purpo | |
MUN2116 | WEITRON |
获取价格 |
Bias Resistor Transistor PNP Silicon |