MTP4N80EA

更新时间： 2024-11-05 13:11:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	162K
描述
4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MTP4N80EA 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.69
外壳连接：	DRAIN	配置：	SINGLE
最小漏源击穿电压：	800 V	最大漏极电流 (ID)：	4 A
最大漏源导通电阻：	3 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	功耗环境最大值：	75 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON	Base Number Matches：	1

MTP4N80EA 数据手册

Order this document

by MTP4N80E/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

4.0 AMPERES

800 VOLTS

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

= 3.0 OHM

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V

Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

800

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

800

Gate–Source Voltage — Continuous

Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)

± 20

± 40

Vdc

Vpk

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

4.0

2.9

Adc

Apk

Total Power Dissipation

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

320

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 100 Vdc, V

= 10 Vdc, I = 8.0 Apk, L = 10 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

θJC

θJA

1.0

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 5

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

中文翻译

下载PDF

与MTP4N80EA相关器件

型号	品牌	获取价格	描述	数据表
MTP4N80EA16A	MOTOROLA	获取价格	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N80EAF	MOTOROLA	获取价格	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N80EAJ	MOTOROLA	获取价格	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N80EC	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-o
MTP4N80ED1	MOTOROLA	获取价格	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N80EN	MOTOROLA	获取价格	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N80ES	MOTOROLA	获取价格	4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N80ET	MOTOROLA	获取价格	4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N80EU	MOTOROLA	获取价格	4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP4N80EU2	MOTOROLA	获取价格	Power Field-Effect Transistor, 4A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-o

与MTP4N80EA相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

MTP4N80EA

MTP4N80EA 技术参数

MTP4N80EA 数据手册

与MTP4N80EA相关器件

与MTP4N80EA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MTP4N80EA

MTP4N80EA 技术参数

MTP4N80EA 数据手册

与MTP4N80EA相关器件

与MTP4N80EA相关文章

您还可以找

您在本页遇到什么问题？