生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.67 |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 50 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP3N50EUA | MOTOROLA |
获取价格 |
暂无描述 | |
MTP3N50EW | MOTOROLA |
获取价格 |
3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP3N50EWC | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-o | |
MTP3N55 | MOTOROLA |
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Power Field-Effect Transistor, 3A I(D), 550V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal | |
MTP3N55 | NJSEMI |
获取价格 |
Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB | |
MTP3N60 | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
MTP3N60 | MOTOROLA |
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Power Field-Effect Transistor, 3A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal | |
MTP3N60 | NJSEMI |
获取价格 |
Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220 | |
MTP3N60E | MOTOROLA |
获取价格 |
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS | |
MTP3N60E | NJSEMI |
获取价格 |
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220 |