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MTP3055V

更新时间： 2024-02-13 19:47:28
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 163K
描述
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

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MTP3055V 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：TO-220, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：12 A
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.18 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：48 W
最大脉冲漏极电流 (IDM)：42 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MTP3055V 数据手册

 浏览型号MTP3055V的Datasheet PDF文件第1页浏览型号MTP3055V的Datasheet PDF文件第2页浏览型号MTP3055V的Datasheet PDF文件第3页浏览型号MTP3055V的Datasheet PDF文件第5页浏览型号MTP3055V的Datasheet PDF文件第6页浏览型号MTP3055V的Datasheet PDF文件第7页 
POWER MOSFET SWITCHING  
Switching behavior is most easily modeled and predicted  
by recognizing that the power MOSFET is charge controlled.  
The lengths of various switching intervals (∆t) are deter-  
mined by how fast the FET input capacitance can be charged  
by current from the generator.  
The capacitance (C ) is read from the capacitance curve at  
iss  
a voltage corresponding to the off–state condition when cal-  
culating t  
and is read at a voltage corresponding to the  
d(on)  
on–state when calculating t  
.
d(off)  
At high switching speeds, parasitic circuit elements com-  
plicate the analysis. The inductance of the MOSFET source  
lead, inside the package and in the circuit wiring which is  
common to both the drain and gate current paths, produces a  
voltage at the source which reduces the gate drive current.  
The voltage is determined by Ldi/dt, but since di/dt is a func-  
tion of drain current, the mathematical solution is complex.  
The MOSFET output capacitance also complicates the  
mathematics. And finally, MOSFETs have finite internal gate  
resistance which effectively adds to the resistance of the  
driving source, but the internal resistance is difficult to mea-  
sure and, consequently, is not specified.  
The resistive switching time variation versus gate resis-  
tance (Figure 9) shows how typical switching performance is  
affected by the parasitic circuit elements. If the parasitics  
were not present, the slope of the curves would maintain a  
value of unity regardless of the switching speed. The circuit  
used to obtain the data is constructed to minimize common  
inductance in the drain and gate circuit loops and is believed  
readily achievable with board mounted components. Most  
power electronic loads are inductive; the data in the figure is  
taken with a resistive load, which approximates an optimally  
snubbed inductive load. Power MOSFETs may be safely op-  
erated into an inductive load; however, snubbing reduces  
switching losses.  
The published capacitance data is difficult to use for calculat-  
ing rise and fall because drain–gate capacitance varies  
greatly with applied voltage. Accordingly, gate charge data is  
used. In most cases, a satisfactory estimate of average input  
current (I  
the drive circuit so that  
) can be made from a rudimentary analysis of  
G(AV)  
t = Q/I  
G(AV)  
During the rise and fall time interval when switching a resis-  
tive load, V remains virtually constant at a level known as  
GS  
the plateau voltage, V  
. Therefore, rise and fall times may  
SGP  
be approximated by the following:  
t = Q x R /(V  
– V )  
GSP  
r
2
G
GG  
t = Q x R /V  
f
2
G
GSP  
where  
V
= the gate drive voltage, which varies from zero to V  
= the gate drive resistance  
GG  
GG  
R
G
and Q and V  
GSP  
are read from the gate charge curve.  
2
During the turn–on and turn–off delay times, gate current is  
not constant. The simplest calculation uses appropriate val-  
ues from the capacitance curves in a standard equation for  
voltage change in an RC network. The equations are:  
t
t
= R  
= R  
C
C
In [V  
/(V  
GG GG  
– V  
)]  
GSP  
d(on)  
G
iss  
In (V  
/V  
GG GSP  
)
d(off)  
G
iss  
1200  
V
= 0 V  
V
= 0 V  
T
= 25°C  
DS  
GS  
J
1000  
800  
600  
400  
C
iss  
C
rss  
C
iss  
C
oss  
200  
0
C
rss  
10  
5
0
5
10  
15  
20  
25  
V
V
DS  
GS  
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)  
Figure 7. Capacitance Variation  
4
Motorola TMOS Power MOSFET Transistor Device Data  
12345678

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