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MTB9N25ET4 PDF预览

MTB9N25ET4

更新时间： 2024-02-25 20:24:29
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
10页 258K
描述
Power Field-Effect Transistor, 9A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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MTB9N25ET4 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：unknown
风险等级：5.84其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：122 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (Abs) (ID)：9 A最大漏极电流 (ID)：9 A
最大漏源导通电阻：0.45 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：65 pFJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL功耗环境最大值：80 W
最大功率耗散 (Abs)：80 W最大脉冲漏极电流 (IDM)：32 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：105 ns最大开启时间（吨）：90 ns
Base Number Matches：1

MTB9N25ET4 数据手册

 浏览型号MTB9N25ET4的Datasheet PDF文件第2页浏览型号MTB9N25ET4的Datasheet PDF文件第3页浏览型号MTB9N25ET4的Datasheet PDF文件第4页浏览型号MTB9N25ET4的Datasheet PDF文件第5页浏览型号MTB9N25ET4的Datasheet PDF文件第6页浏览型号MTB9N25ET4的Datasheet PDF文件第7页 
Order this document  
by MTB9N25E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
9.0 AMPERES  
250 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
2
The D PAK package has the capability of housing a larger die  
R
= 0.45 OHM  
DS(on)  
than any existing surface mount package which allows it to be used  
in applications that require the use of surface mount components  
with higher power and lower R  
capabilities. This advanced  
DS(on)  
TMOS E–FET is designed to withstand high energy in the  
avalanche and commutation modes. The new energy efficient  
design also offers a drain–to–source diode with a fast recovery  
time. Designed for low voltage, high speed switching applications in  
power supplies, converters and PWM motor controls, these  
devices are particularly well suited for bridge circuits where diode  
speed and commutating safe operating areas are critical and offer  
additional safety margin against unexpected voltage transients.  
D
•
•
•
Robust High Voltage Termination  
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
G
CASE 418B–02, Style 2  
2
D PAK  
S
•
•
•
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
Short Heatsink Tab Manufactured — Not Sheared  
Specially Designed Leadframe for Maximum Power Dissipation  
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4  
Suffix to Part Number  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
250  
Unit  
Vdc  
Vdc  
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
250  
Gate–to–Source Voltage — Continuous  
— Non–Repetitive (t ≤ 10 ms)  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
V
GSM  
p
Drain Current — Continuous  
— Continuous @ 100°C  
— Single Pulse (t ≤ 10 µs)  
I
I
9.0  
5.7  
32  
Adc  
D
D
I
Apk  
p
DM  
Total Power Dissipation @ 25°C  
Derate above 25°C  
Total Power Dissipation @ T = 25°C  
P
80  
0.64  
2.5  
Watts  
W/°C  
Watts  
D
(1)  
Operating and Storage Temperature Range  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
A
T , T  
J stg  
– 55 to 150  
°C  
E
AS  
mJ  
J
(V  
DD  
= 80 Vdc, V = 10 Vdc, Peak I = 9.0 Apk, L = 3.0 mH, R = 25 Ω)  
122  
GS L G  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
R
R
1.56  
62.5  
50  
°C/W  
°C  
θJC  
θJA  
θJA  
(1)  
— Junction to Ambient  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
260  
L
(1) When surface mounted to an FR4 board using the minimum recommended pad size.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995  
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