Datasheet > MTBA6C12J4

MTBA6C12J4

更新时间： 2022-02-26 14:11:09

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
13页	437K
描述
N P-Channel Enhancement Mode Power MOSFET

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数据手册

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MTBA6C12J4 数据手册

Spec. No. : C973J4

Issued Date : 2014.06.13

Revised Date : 2014.10.02

Page No. : 1/13

CYStech Electronics Corp.

N & P-Channel Enhancement Mode Power MOSFET

N-CH

120V

P-CH

-120V

-1.6A

MTBA6C12J4

BVDSS

ID @ VGS=10V(-10V)

RDSON(typ.) @VGS=(-)10V

176 mΩ 246 mΩ

RDSON(typ.) @VGS=(-)4.5V

183 mΩ 276 mΩ

Features

• Low Gate Charge

• Simple Drive Requirement

• RoHS compliant & Halogen-free package

Equivalent Circuit

Outline

MTBA6C12J4

TO-252-4L

G：Gate D：Drain

S：Source

Absolute Maximum Ratings (TA=25°C, unless otherwise noted)

Limits

Unit

Parameter

Symbol

N-channel P-channel

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1)

Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1)

Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note4)

Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note4)

VDS

VGS

120

±20

8.0

5.6

2.0

1.6

-120

±20

-6.8

-4.8

-1.6

-1.3

-8

Pulsed Drain Current *1

(Note3)

(Note1)

(Note2)

IDM

Total Power Dissipation (TC=25℃)

Total Power Dissipation (TC=100℃)

Total Power Dissipation (TA=25℃)

Total Power Dissipation (TA=70℃)

Operating Junction and Storage Temperature Range

12.5

2.4

PDSM

1.7

Tj, Tstg

-55~+175

°C

MTBA6C12J4

CYStek Product Specification

12 3 4 5 6 7...13

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