UGDT Series
Vishay Custom Magnetics
www.vishay.com
Micro Gate Drive Transformers
FEATURES
Available
• Deliver MOSFET / IGBT gate power and timing
signals simultaneously
• Directly drive high side MOSFETs / IGBTs on busses up
to 200 V
• Excellent rise time, overshoot, and peak current
characteristics
• For lead (Pb)-free parts, please add “-LF” to the end of the
part number
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
ABSOLUTE MAXIMUM RATINGS
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PARAMETER CONDITIONS
LIMITS
UNITS
Drive to gate,
1500
VDC
Dielectric
withstand
voltage
1 min
Gate to gate,
1 min
500
100
VDC
mARMS
mW
Winding
current
Any winding
Total power
400
dissipation (1)
Operating
Continuous
Continuous
-55 to +130
°C
temperature
Storage
temperature
-55 to +155
125 to 750
°C
Frequency
kHz
mm
Size
(L x W x H)
8.9 x 6.6 x 5.6
Surface-mount
Terminals
Note
(1)
Derate at 5 mW/°C above 25 °C
STANDARD ELECTRICAL SPECIFICATIONS
DC
INTERWINDING
RESISTANCE (3) CAPACITANCE
DRIVE GATE
USEFUL
FREQ.
RANGE
(kHz)
DRIVE
MAGNETIZING LEAKAGE
TRANSFER
RATIO
EXCITATION INDUCTANCE INDUCTANCE
PART NUMBER (1)
SCHEMATIC
DRIVE GATES
MAX. MAX.
TO
TO
MAX.
(V x μs)
MIN.
MAX.
(
1 ꢀ) (2)
(μH) (3)(4)
(nH) (5)
GATE
MAX.
(pF)
GATE
MAX.
(pF)
(Ω)
(Ω)
MTBAUGDT125050 125 to 500 1 : 0.5 : 0.5
MTBAUGDT125075 125 to 500 1 : 0.75 : 0.75
63
66
330
360
330
350
264
473
300
500
500
2.0
2.0
2.0
1.0
1.5
1.5
1.8
0.7
2.0
2.0
0.65
1.5
0.3
0.3
60
60
30
30
A
A
A
B
A
B
A
MTBAUGDT125100 125 to 500
MTBAUGDT250101 250 to 750
MTBAUGDT250102 250 to 750
MTBAUGDT250251 250 to 750
MTBAUGDT250252 250 to 750
1 : 1 : 1
1 : 1
63
500
160
75
160
n/a
95
25.8
22.4
30.6
23.8
1000
300
1 : 1 : 1
2.5 : 1
95
1500
900
25
n/a
27
2.5 : 1 : 1
27
Notes
(1)
For lead (Pb)-free parts, please add “-LF” to the end of the part number
Drive: gate or drive : gate : gate
TA = 25 °C
Small signal measurement across the drive winding with both gates open
Small signal measurement a across the drive winding with both gates shorted
Derate at 5 mW/°C above 25 °C
(2)
(3)
(4)
(5)
(6)
Revision: 27-Oct-2020
Document Number: 34567
1
For technical questions, contact: magnetics@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000