Datasheet > MTBC7N10K3

MTBC7N10K3

更新时间： 2022-06-24 15:41:42

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
10页	718K
描述
100V N-Channel Enhancement Mode MOSFET

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数据手册

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MTBC7N10K3 数据手册

Spec. No. : C886K3

Issued Date : 2018.06.13

Revised Date :

CYStech Electronics Corp.

Page No. : 1/10

100V N-Channel Enhancement Mode MOSFET

BVDSS

100V

389mΩ

413mΩ

407mΩ

MTBC7N10K3

ID @T =25°C, VGS=10V

RDSON(TYP)@VGS=10V, ID=1A

RDSON(TYP)@VGS=4.5V, ID=1A

RDSON(TYP)@VGS=4V, ID=1A

Features

• Lower gate charge.

• ESD protected gate.

• Pb-free lead plating and Halogen-free package.

Equivalent Circuit

Outline

MTBC7N10K3

TO-92L

G：Gate S：Source D：Drain

S D G

Ordering Information

Device

Package

TO-92L

Shipping

MTBC7N10K3-0-TB-G

2000 pcs / tape & box

(Pb-free lead plating and halogen-free package)

TO-92L

500 pcs / bag, 10 bags/box,

10 boxes/carton

MTBC7N10K3-0-BM-G

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton

Product rank, zero for no rank products

Product name

MTBC7N10K3

CYStek Product Specification

12 3 4 5 6 7...10

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