Datasheet > MTA9D0B03Q8

MTA9D0B03Q8

更新时间： 2022-02-26 12:37:55

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	295K
描述
Dual P-Channel Enhancement Mode Power MOSFET

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数据手册

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MTA9D0B03Q8 数据手册

Spec. No. : C050Q8

Issued Date : 2018.09.12

Revised Date : 2018.09.17

Page No. : 2/9

CYStech Electronics Corp.

Absolute Maximum Ratings (Ta=25C)

Parameter

Symbol

VDS

Limits

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

VGS

±20

-18.6

-13.2

-10.5

-8.8

Continuous Drain Current @VGS=-10V, TC=25 C

Continuous Drain Current @VGS=-10V, TC=100 C

Continuous Drain Current @VGS=-10V, TA=25 C

Continuous Drain Current @VGS=-10V, TA=70 C

Pulsed Drain Current (Note 1)

IDM

-82

TA=25ꢀC (Note 3)

TA=100ꢀC

2.4

Power Dissipation

1.3

Operating Junction and Storage Temperature Range

Tj ; Tstg

-55~+175

C

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle≤1%

Symbol

Rth,j-c

Rth,j-a

Value

62.5 *3

Unit

C/W

3. Surface mounted on 1 in² copper pad of FR-4 board, 125C/W when mounted on minimum copper pad

Characteristics (Tj=25C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

V_GS(th)

I_GSS

-30

-0.8

V_GS=0V, ID=-250μA

V_DS= V_GS, I_D=-250μA

-1.8

100

-1

-10

ꢁ

V_GS= 20V, V_DS=0V

V_DS=-24V, V_GS=0V

I_DSS

μA

V_DS=-24V, V_GS=0V, Tj=125C

V_GS=-10V, I_D=-12A

V_GS=-4.5V, I_D=-10A

V_GS=-3V, I_D=-5A

8.7

12.3

22.4

*R_{DS(ON) *1}

G_FS

V_DS=-5V, I_D=-10A

Dynamic

Qgs

Qgd

t_{d(ON) *1, 2}

t_r

t_{d(OFF) *1, 2}

51.1

6.1

10.5

9.6

70.6

*1, 2

V_DS=-15V, I_D=-12A, V_GS=-10V

V_DS=-15V, I_D=-12A,V_GS=-10V,

*1, 2

R_G=1

t_f

*1, 2

MTA9D0B03Q8

CYStek Product Specification

123 4 5 6 7...9

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