Datasheet > MTA9D0P03V8-0-T6-G

MTA9D0P03V8-0-T6-G

更新时间： 2022-02-26 13:53:28

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	762K
描述
P-Channel Enhancement Mode Power MOSFET

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MTA9D0P03V8-0-T6-G 数据手册

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Spec. No. : C050V8

Issued Date : 2019.01.22

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

P-Channel Enhancement Mode Power MOSFET

MTA9D0P03V8

BVDSS

-30V

-44A

ID@ TC=25C, VGS=-10V

ID@ TA=25C, VGS=-10V

RDSON @VGS=-10V, ID=-12A

RDSON @VGS=-4.5V, ID=-10A

RDSON @VGS=-3V, ID=-5A

-11.6A

Features

• Simple drive requirement

• Low on-resistance

• Fast switching speed

• Pb-free lead plating package

8.9 mΩ(typ.)

11.8mΩ(typ.)

20.4 mΩ(typ.)

Equivalent Circuit

Outline

DFN3×3

MTA9D0P03V8

G：Gate S：Source D：Drain

Pin 1

Ordering Information

Device

Package

Shipping

DFN3×3

MTA9D0P03V8-0-T6-G

3000 pcs / Tape & Reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTA9D0P03V8

CYStek Product Specification

12 3 4 5 6 7...9

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