Datasheet > MT5C2564C-45/883C

MT5C2564C-45/883C

更新时间： 2024-11-06 20:22:03

品牌	Logo	应用领域
MICROSS		静态存储器内存集成电路
页数	文件大小	规格书
11页	126K
描述
Standard SRAM, 64KX4, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24

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SRAM

MT5C2564

Austin Semiconductor, Inc.

64K x 4 SRAM

SRAM MEMORY ARRAY

PIN ASSIGNMENT

(Top View)

AVAILABLE AS MILITARY

SPECIFICATIONS

• SMD 5962-88681

• MIL-STD-883

24-Pin DIP (C)

(300 MIL)

28-Pin LCC (EC)

FEATURES

2 1 28 27

Vcc

• High Speed: 15, 20, 25, 35, 45, 55, and 70

• Battery Backup: 2V data retention

• Low power standby

2 6

2 5

2 4

2 3

2 2

2 1

2 0

1 9

1 8

A15

A14

A13

A12

A11

A10

DQ4

DQ3

DQ2

A15

A14

A13

A12

A11

A10

DQ4

DQ3

DQ2

DQ1

WE\

A8 1 0

A9 1 1

CE\ 1 2

• High-performance, low-power, CMOS double-metal

process

• Single +5V (+10%) Power Supply

• Easy memory expansion with CE\

• All inputs and outputs are TTL compatible

A9 10

CE\ 11

Vss 12

13 14 15 16 17

OPTIONS

• Timing

MARKING

15ns access

20ns access

25ns access

35ns access

45ns access

55ns access

70ns access

-15

-20

-25

-35

-45

-55*

-70*

GENERAL DESCRIPTION

The Austin Semiconductor SRAM family employs

high-speed, low-power CMOS and are fabricated using double-

layer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications,

Austin Semiconductor offers chip enable (CE\) on all organiza-

tions. This enhancement can place the outputs in High-Z for

additional flexibility in system design. The x4 configuration

features common data input and output.

Writing to these devices is accomplished when write

enable (WE\) and CE\ inputs are both LOW. Reading is accom-

plished when WE\ remains HIGH and CE\ goes LOW. The

device offers a reduced power standby mode when disabled.

This allows system designs to achieve low standby power re-

quirements.

• Package(s)

Ceramic DIP (300 mil)

CeramicLCC

No. 106

No. 204

• Operating Temperature Ranges

Industrial (-40^oC to +85^oC)

Military (-55^oC to +125^oC)

• 2V data retention/low power

*Electrical characteristics identical to those provided for the 45ns

access devices.

These devices operate from a single +5V power sup-

ply and all inputs and outputs are fully TTL compatible.

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

MT5C2564

Rev. 2.0 11/00

12 3 4 5 6 7...11

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与MT5C2564C-45/883C相关器件

型号	品牌	获取价格	描述	数据表
MT5C2564C-45/IT	MICROSS	获取价格	Standard SRAM, 64KX4, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
MT5C2564C-45L/883C	MICROSS	获取价格	Standard SRAM, 64KX4, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
MT5C2564C-45L/IT	MICROSS	获取价格	Standard SRAM, 64KX4, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
MT5C2564C-45L/XT	MICROSS	获取价格	Standard SRAM, 64KX4, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
MT5C2564C-55	AUSTIN	获取价格	SRAM
MT5C2564C-55/883C	AUSTIN	获取价格	64K x 4 SRAM SRAM MEMORY ARRAY
MT5C2564C-55/883C	MICROSS	获取价格	Standard SRAM, 64KX4, 55ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
MT5C2564C-55/IT	AUSTIN	获取价格	64K x 4 SRAM SRAM MEMORY ARRAY
MT5C2564C-55/IT	MICROSS	获取价格	Standard SRAM, 64KX4, 55ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
MT5C2564C-55/XT	AUSTIN	获取价格	64K x 4 SRAM SRAM MEMORY ARRAY

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