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MT58L128L18FT8.5 PDF预览

MT58L128L18FT8.5

更新时间: 2024-02-14 10:23:59
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
25页 522K
描述
128KX18 STANDARD SRAM, 8.5ns, PQFP100, PLASTIC, MS-026BHA, TQFP-100

MT58L128L18FT8.5 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP,
针数:100Reach Compliance Code:unknown
风险等级:5.25Is Samacsys:N
最长访问时间:8.5 nsJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:2359296 bit内存集成电路类型:STANDARD SRAM
内存宽度:18湿度敏感等级:3
功能数量:1端子数量:100
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX18
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD (800)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

MT58L128L18FT8.5 数据手册

 浏览型号MT58L128L18FT8.5的Datasheet PDF文件第7页浏览型号MT58L128L18FT8.5的Datasheet PDF文件第8页浏览型号MT58L128L18FT8.5的Datasheet PDF文件第9页浏览型号MT58L128L18FT8.5的Datasheet PDF文件第11页浏览型号MT58L128L18FT8.5的Datasheet PDF文件第12页浏览型号MT58L128L18FT8.5的Datasheet PDF文件第13页 
2Mb : 128K x 18, 64K x 32/36  
FLOW-THROUGH SYNCBURST SRAM  
FBGA PIN DESCRIPTIONS (co n t in u e d )  
x18  
x32/x36  
SYMBOL TYPE  
Supply Ground: GND.  
DESCRIPTION  
1H, 2H, 4C, 4N, 1H, 2H, 4C, 4N,  
5C, 5D, 5E, 5F, 5C, 5D, 5E, 5F,  
V
SS  
5G, 5H, 5J,  
5K, 5L, 5M,  
5G, 5H, 5J,  
5K, 5L, 5M,  
6C, 6D, 6E, 6F, 6C, 6D, 6E, 6F,  
6G, 6H, 6J,  
6K, 6L, 6M,  
7C, 7D, 7E,  
7F, 7G, 7H,  
7J, 7K, 7L,  
6G, 6H, 6J,  
6K, 6L, 6M,  
7C, 7D, 7E,  
7F, 7G, 7H,  
7J, 7K, 7L,  
7M, 7N, 8C, 8N 7M, 7N, 8C, 8N  
5P, 5R, 7P, 7R 5P, 5R, 7P, 7R  
DNU  
NC  
Do Not Use: These signals may either be unconnected or wired to  
GND to improve package heat dissipation.  
1A, 1B, 1C,  
1D, 1E, 1F,  
1G, 1P, 2C,  
2J, 2K, 2L,  
2M, 2N, 2P,  
2R, 3H, 4B,  
5A, 5N, 6N,  
9H, 10C,  
1A, 1B, 1P,  
2C, 2N,  
2P, 2R, 3H,  
5N, 6N,  
9H, 10C,  
10H, 10N,  
11A, 11B,  
11P, 11R  
No Connect: These signals are not internally connected and  
may be connected to ground to improve package heat  
dissipation. Pins 11R, 11P, and 6N are reserved for address  
expansion; 4Mb, 8Mb, and 16Mb respectively.  
10D, 10E,  
10F, 10G,  
10H, 10N,  
11B, 11J,  
11K, 11L,  
11M, 11N,  
11P, 11R  
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM  
MT58L128L18F_2.p65 Rev. 7/00  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
10  
©2000,MicronTechnology,Inc.  

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