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MT58L128L18DT-10IT PDF预览

MT58L128L18DT-10IT

更新时间: 2024-01-18 00:33:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
17页 308K
描述
Cache SRAM, 128KX18, 5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100

MT58L128L18DT-10IT 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.45
最长访问时间:5 nsJESD-30 代码:R-PQFP-G100
长度:20 mm内存密度:2359296 bit
内存集成电路类型:CACHE SRAM内存宽度:18
功能数量:1端子数量:100
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX18
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
宽度:14 mmBase Number Matches:1

MT58L128L18DT-10IT 数据手册

 浏览型号MT58L128L18DT-10IT的Datasheet PDF文件第4页浏览型号MT58L128L18DT-10IT的Datasheet PDF文件第5页浏览型号MT58L128L18DT-10IT的Datasheet PDF文件第6页浏览型号MT58L128L18DT-10IT的Datasheet PDF文件第8页浏览型号MT58L128L18DT-10IT的Datasheet PDF文件第9页浏览型号MT58L128L18DT-10IT的Datasheet PDF文件第10页 
2Mb: 128K x 18, 64K x 32/36  
PIPELINED, DCD SYNCBURST SRAM  
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)  
FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL)  
X...X00  
X...X01  
X...X10  
X...X11  
X...X01  
X...X00  
X...X11  
X...X10  
X...X10  
X...X11  
X...X00  
X...X01  
X...X11  
X...X10  
X...X01  
X...X00  
LINEAR BURST ADDRESS TABLE (MODE = LOW)  
FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL)  
X...X00  
X...X01  
X...X10  
X...X11  
X...X01  
X...X10  
X...X11  
X...X00  
X...X10  
X...X11  
X...X00  
X...X01  
X...X11  
X...X00  
X...X01  
X...X10  
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x18)  
FUNCTION  
GW#  
H
BWE#  
BWa#  
BWb#  
READ  
H
L
L
L
L
X
X
H
L
X
H
H
L
READ  
H
WRITE Byte “a”  
WRITE Byte “b”  
WRITE All Bytes  
WRITE All Bytes  
H
H
H
L
H
L
L
X
X
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x32/x36)  
FUNCTION  
GW#  
H
BWE#  
BWa#  
BWb#  
BWc#  
BWd#  
READ  
H
L
L
L
X
X
H
L
X
H
H
L
X
H
H
L
X
H
H
L
READ  
H
WRITE Byte “a”  
WRITE All Bytes  
WRITE All Bytes  
H
H
L
L
X
X
X
X
NOTE: Using BWE# and BWa# through BWd#, any one or more bytes may be written.  
2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM  
MT58L128L18D.p65 – Rev. 9/99  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
1999, Micron Technology, Inc.  
7

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