Datasheet > MT41J64M16

MT41J64M16

更新时间： 2024-02-24 02:40:12

品牌	Logo	应用领域
MDTIC		动态存储器双倍数据速率
页数	文件大小	规格书
181页	8341K
描述
1Gb: x4, x8, x16 DDR3 SDRAM

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中文翻译

获取价格

数据手册

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MT41J64M16 数据手册

1Gb : x4, x8, x16 DDR3 SDRAM

Fe a t u re s

DDR3 SDRAM

MT41J256M4 – 32 Me g x 4 x 8 Ba n ks

MT41J128M8 – 16 Me g x 8 x 8 Ba n ks

MT41J64M16 – 8 Me g x 16 x 8 Ba n ks

Op t io n s

Ma rkin g

Fe a t u re s

• VDD = VDDQ = +1.5V ±0.075V

• Configuration

– 256 Meg x 4

– 128 Meg x 8

– 64 Meg x 16

• 1.5V center-terminated push/ pull I/ O

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

256M4

128M8

64M16

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT) for

data, strobe, and mask signals

• CAS (READ) latency (CL): 5, 6, 7, 8, 9, 10, or 11

• POSTED CAS ADDITIVE latency (AL): 0, CL - 1, CL - 2

• CAS (WRITE) latency (CWL): 5, 6, 7, 8, based on CK

• FBGA package (Pb-free) - x4, x8

– 78-ball FBGA (8mm x 11.5mm) Rev. F

– 78-ball FBGA (9mm x 11.5mm) Rev. D

– 86-ball FBGA (9mm x 15.5mm) Rev. B

• FBGA package (Pb-free) - x16

– 96-ball FBGA (9mm x 15.5mm) Rev. B

• Timing - cycle time

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

– 1.25ns @ CL = 11 (DDR3-1600)

– 1.25ns @ CL = 10 (DDR3-1600)

– 1.25ns @ CL = 9 (DDR3-1600)

– 1.5ns @ CL = 10 (DDR3-1333)

– 1.5ns @ CL = 9 (DDR3-1333)

– 1.5ns @ CL = 8 (DDR3-1333)

– 1.87ns @ CL = 8 (DDR3-1066)

– 1.87ns @ CL = 7 (DDR3-1066)

– 2.5ns @ CL = 6 (DDR3-800)

– 2.5ns @ CL = 5 (DDR3-800)

• Revision

-125

-125E

-125F

-15

-15E

-15F

-187

-187E

-25

-25E

:B/ :D/ :F

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• T of 0 C to 95 C

– 64ms, 8,192 cycle refresh at 0 C to 85 C

– 32ms at 85 C to 95 C

• Clock frequency range of 300–800 MHz

• Self refresh temperature (SRT)

• Autom atic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

Ta b le 1:

Ke y Tim in g Pa ra m e t e rs

Sp e e d Gra d e

-125

Da t a Ra t e (MT/s)

Ta rg e t ^tRCD-^tRP-CL

^tRCD (n s)

^tRP (n s)

CL (n s)

1600

1333

1066

800

11-11-11

10-10-10

9-9-9

13.75

12.5

11.25

13.75

12.5

11.25

13.75

12.5

11.25

-125E

-125F

-15

10-10-10

9-9-9

-15E

-15F

-187

-187E

-25

13.5

8-8-8

7-7-7

13.1

6-6-6

-25E

800

5-5-5

12.5

PDF: 09005aef826aa906/Source: 09005aef82a357c3

1Gb_DDR3_D1 .fm - Rev. D 8/1/08 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...181

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与MT41J64M16相关器件

型号	品牌	获取价格	描述	数据表
MT41J64M16JT	MICRON	获取价格	MT41J256M4 â 32 Meg x 4 x 8 banks
MT41J64M16JT-125G	MICRON	获取价格	DDR3 SDRAM MT41J256M4 â 32 Meg x 4 x 8 bank
MT41K128M16JT-107	MICRON	获取价格	2Gb: x4, x8, x16 DDR3L SDRAM
MT41K128M16JT-107 AAT	MICRON	获取价格	MT41K256M8 (32 Meg x 8 x 8 banks), MT41K128M16 (16 Meg x 16 x 8 banks)
MT41K128M16JT-107 IT	MICRON	获取价格	2Gb: x4, x8, x16 DDR3L SDRAM
MT41K128M16JT-125	MICRON	获取价格	2Gb: x4, x8, x16 DDR3L SDRAM
MT41K128M16JT-125 AAT	MICRON	获取价格	MT41K256M8 (32 Meg x 8 x 8 banks), MT41K128M16 (16 Meg x 16 x 8 banks)
MT41K128M16JT-125 AIT	MICRON	获取价格	MT41K256M8 (32 Meg x 8 x 8 banks), MT41K128M16 (16 Meg x 16 x 8 banks)
MT41K128M16JT-125 AUT	MICRON	获取价格	MT41K256M8 (32 Meg x 8 x 8 banks), MT41K128M16 (16 Meg x 16 x 8 banks)
MT41K128M16JT-125 IT	MICRON	获取价格	2Gb: x4, x8, x16 DDR3 SDRAM

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