Datasheet > MT41K128M16JT-125 AUT

MT41K128M16JT-125 AUT

更新时间： 2024-03-03 10:09:25

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
211页	16448K
描述
MT41K256M8 (32 Meg x 8 x 8 banks), MT41K128M16 (16 Meg x 16 x 8 banks)

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2Gb: x8, x16 Automotive DDR3L SDRAM

Description

1.35V Automotive DDR3L SDRAM

MT41K256M8 – 32 Meg x 8 x 8 banks

MT41K128M16 – 16 Meg x 16 x 8 banks

• Output driver calibration

• AEC-Q100

Description

The 1.35V DDR3L SDRAM device is a low-voltage ver-

sion of the 1.5V DDR3 SDRAM device. Refer to the

DDR3 (1.5V) SDRAM data sheet specifications when

running in 1.5V compatible mode.

• PPAP submission

• 8D response time

Options

• Configuration

– 256 Meg x 8

– 128 Meg x 16

Marking

Features

256M8

128M16

• V_DD= V_DDQ= 1.35V (1.283–1.45V)

• Backward-compatible to V_DD= V_DDQ= 1.5V ±0.075V

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• FBGA package (Pb-free)

– 78-ball FBGA (8mm x 10.5mm)

– x8

– 96-ball FBGA (8mm x 14mm)

– x16

• Timing – cycle time

– 1.07ns @ CL = 13 (DDR3-1866)

– 1.25ns @ CL = 11 (DDR3-1600)

– 1.5ns @ CL = 9 (DDR3-1333)

– 1.875ns @ CL = 7 (DDR3-1066)

• Product certification

– Automotive

• Operating temperature

– Industrial (–40°C ≤ T_C≤ +95°C)

– Automotive (–40°C ≤ T_C≤ +105°C)

– Ultra-high (–40°C ≤ T_C≤ +125°C)²

• Revision

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

-107

-125

-15E

-187E

• Refresh maximum interval time at T_Ctemperature

range

– 64ms at –40°C to +85°C

– 32ms at +85°C to +105°C

– 16ms at +105°C to +115°C

– 8ms at +115°C to +125°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

1. Not all options listed can be combined to

define an offered product. Use the part cat-

alog search on

http://www.micron.com for available offer-

ings.

2. The UT option use based on automotive us-

age model. Please contact Micron sales rep-

resentative if you have questions. The UT

option is not available for -107 speed grade.

Notes:

• Multipurpose register

Table 1: Key Timing Parameters

Speed Grade

-107^{1, 2, 3}

-125^{1, 2}

Data Rate (MT/s)

Target ^tRCD-^tRP-CL

^tRCD (ns)

13.91

^tRP (ns)

13.91

13.75

13.5

CL (ns)

13.91

13.75

13.5

1866

1600

1333

13-13-13

11-11-11

9-9-9

13.75

-15E¹

13.5

09005aef85741711

2Gb_auto_DDR3L.pdf - Rev. E 8/20 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与MT41K128M16JT-125 AUT相关器件

型号	品牌	获取价格	描述	数据表
MT41K128M16JT-125 IT	MICRON	获取价格	2Gb: x4, x8, x16 DDR3 SDRAM
MT41K128M16JT-125 M	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT41K128M16JT-125 XIT	MICRON	获取价格	Product Longevity Program
MT41K128M8DA-107	MICRON	获取价格	5300 SATA SSD Data Sheet
MT41K128M8DA-107 IT	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT41K1G4	MICRON	获取价格	4Gb: x4, x8, x16 1.35V DDR3L SDRAM
MT41K1G8RKB-107	MICRON	获取价格	Rev. K
MT41K256M16	MICRON	获取价格	4Gb: x4, x8, x16 1.35V DDR3L SDRAM
MT41K256M16HA-125ITE	MICRON	获取价格	4Gb: x4, x8, x16 1.35V DDR3L SDRAM
MT41K256M16TW-093	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard

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