Datasheet > MT41K128M16JT-125

MT41K128M16JT-125

更新时间： 2024-03-03 10:10:11

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
220页	5231K
描述
2Gb: x4, x8, x16 DDR3L SDRAM

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数据手册

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2Gb: x4, x8, x16 DDR3L SDRAM

Description

DDR3L SDRAM

MT41K512M4 – 64 Meg x 4 x 8 banks

MT41K256M8 – 32 Meg x 8 x 8 banks

MT41K128M16 – 16 Meg x 16 x 8 banks

Description

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

The 1.35V DDR3L SDRAM device is a low-voltage

version of the 1.5V DDR3 SDRAM device. Refer to the

DDR3 (1.5V) SDRAM data sheet specifications when

running in 1.5V compatible mode.

Options

• Configuration

– 512 Meg x 4

– 256 Meg x 8

Marking

Features

• V_DD= V_DDQ= 1.35V (1.283–1.45V)

• Backward-compatible to V_DD= V_DDQ= 1.5V ±0.075V

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

512M4

256M8

128M16

– 128 Meg x 16

• FBGA package (Pb-free) – x4, x8

– 78-ball (8mm x 10.5mm x 1.2mm)

Rev. K

• FBGA package (Pb-free) – x16

– 96-ball (8mm x 14mm x 1.2mm)

Rev. K

• Nominal and dynamic on-die termination (ODT) for

data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• T_Cof 95°C

• Timing – cycle time

-107

-125

-15E

-187E

– 1.07ns @ CL = 13 (DDR3-1866)

– 1.25ns @ CL = 11 (DDR3-1600)

– 1.5ns @ CL = 9 (DDR3-1333)

– 1.875ns @ CL = 7 (DDR3-1066)

• Operating temperature

– Commercial (0°C ≤ T_C≤ +95°C)

– Industrial (–40°C ≤ T_C≤ +95°C)

• Revision

None

– 64ms, 8192-cycle refresh up to 85°C

– 32ms, 8192-cycle refresh at >85°C to 95°C

• Self refresh temperature (SRT)

Table 1: Key Timing Parameters

Speed Grade

-107^{1, 2, 3}

Data Rate (MT/s)

Target ^tRCD-^tRP-CL

^tRCD (ns)

^tRP (ns)

CL (ns)

1866

13-13-13

13.91

-125^{1, 2}

1600

1333

1066

11-11-11

9-9-9

13.75

13.5

13.1

13.75

13.5

13.1

13.75

13.5

13.1

-15E¹

-187E

7-7-7

Notes: 1. Backward compatible to 1066, CL = 7 (-187E).

2. Backward compatible to 1333, CL = 9 (-15E).

3. Backward compatible to 1600, CL = 11 (-125).

CCMTD-1725822587-7895

2Gb_DDR3L.pdf - Rev. P 03/2022 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...220

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与MT41K128M16JT-125相关器件

型号	品牌	获取价格	描述	数据表
MT41K128M16JT-125 AAT	MICRON	获取价格	MT41K256M8 (32 Meg x 8 x 8 banks), MT41K128M16 (16 Meg x 16 x 8 banks)
MT41K128M16JT-125 AIT	MICRON	获取价格	MT41K256M8 (32 Meg x 8 x 8 banks), MT41K128M16 (16 Meg x 16 x 8 banks)
MT41K128M16JT-125 AUT	MICRON	获取价格	MT41K256M8 (32 Meg x 8 x 8 banks), MT41K128M16 (16 Meg x 16 x 8 banks)
MT41K128M16JT-125 IT	MICRON	获取价格	2Gb: x4, x8, x16 DDR3 SDRAM
MT41K128M16JT-125 M	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT41K128M16JT-125 XIT	MICRON	获取价格	Product Longevity Program
MT41K128M8DA-107	MICRON	获取价格	5300 SATA SSD Data Sheet
MT41K128M8DA-107 IT	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT41K1G4	MICRON	获取价格	4Gb: x4, x8, x16 1.35V DDR3L SDRAM
MT41K1G8RKB-107	MICRON	获取价格	Rev. K

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