Datasheet > MT41K1G4

MT41K1G4

更新时间： 2024-09-28 12:28:39

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
27页	553K
描述
4Gb: x4, x8, x16 1.35V DDR3L SDRAM

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中文翻译

获取价格

数据手册

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MT41K1G4 数据手册

4Gb: x4, x8, x16 DDR3L SDRAM

Description

1.35V DDR3L SDRAM

MT41K1G4 – 128 Meg x 4 x 8 banks

MT41K512M8 – 64 Meg x 8 x 8 banks

MT41K256M16 – 32 Meg x 16 x 8 banks

• T_Cof 0°C to +95°C

– 64ms, 8192-cycle refresh at 0°C to +85°C

– 32ms at +85°C to +95°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

Description

DDR3L SDRAM (1.35V) is a low voltage version of the

DDR3 SDRAM (1.5V).

Features

• V_DD= V_DDQ= 1.35V (1.283–1.45V)

• Backward compatible to V_DD= V_DDQ= 1.5V ±0.075V

– Supports DDR3L devices to be backward com-

patible in 1.5V applications

• Multipurpose register

• Output driver calibration

Options

• Configuration

– 1 Gig x 4

– 512 Meg x 8

Marking

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

1G4

512M8

256M16

– 256 Meg x 16

• FBGA package (Pb-free) – x4, x8

– 78-ball (10.5mm x 12mm) Rev. D

– 78-ball (9mm x 10.5mm) Rev. E, J

• FBGA package (Pb-free) – x16

– 96-ball (10mm x 14mm) Rev. D

– 96-ball (9mm x 14mm) Rev. E

• Timing – cycle time

– 1.071ns @ CL = 13 (DDR3-1866)

– 1.25ns @ CL = 11 (DDR3-1600)

– 1.5ns @ CL = 9 (DDR3-1333)

– 1.87ns @ CL = 7 (DDR3-1066)

• Operating temperature

– Commercial (0°C ≤ T_C≤ +95°C)

– Industrial (–40°C ≤ T_C≤ +95°C)

• Revision

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

-107

-125

-15E

-187E

None

:D/:E/:J

Table 1: Key Timing Parameters

Speed Grade

-107^{1, 2, 3}

-125^{1, 2}

Data Rate (MT/s)

Target ^tRCD-^tRP-CL

13-13-13

^tRCD (ns)

13.91

13.75

13.5

^tRP (ns)

13.91

13.75

13.5

CL (ns)

13.91

13.75

13.5

1866

1600

1333

1066

11-11-11

-15E¹

9-9-9

-187E

7-7-7

13.1

1. Backward compatible to 1066, CL = 7 (-187E).

2. Backward compatible to 1333, CL = 9 (-15E).

3. Backward compatible to 1600, CL = 11 (-107).

Notes:

PDF: 09005aef84780270

4Gb_DDR3L_SDRAM.pdf - Rev. H 4/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...27

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与MT41K1G4相关器件

型号	品牌	获取价格	描述	数据表
MT41K1G8RKB-107	MICRON	获取价格	Rev. K
MT41K256M16	MICRON	获取价格	4Gb: x4, x8, x16 1.35V DDR3L SDRAM
MT41K256M16HA-125ITE	MICRON	获取价格	4Gb: x4, x8, x16 1.35V DDR3L SDRAM
MT41K256M16TW-093	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT41K256M16TW-107	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT41K256M16TW-107 AAT	MICRON	获取价格	MT41K512M8: 64 Meg x 8 x 8 banks, MT41K256M16: 32 Meg x 16 x 8 banks
MT41K256M16TW-107 AIT	MICRON	获取价格	MT41K512M8: 64 Meg x 8 x 8 banks, MT41K256M16: 32 Meg x 16 x 8 banks
MT41K256M16TW-107 AUT	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
MT41K256M16TW-107 XIT	MICRON	获取价格	Premium Lifecycle Product; V00H; MT41K1G4, MT41K512M8, MT41K256M16
MT41K256M8DA-107	MICRON	获取价格	2Gb: x4, x8, x16 DDR3 SDRAM

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