Datasheet > MT16VDDF6464HG-262

MT16VDDF6464HG-262

更新时间： 2024-11-06 03:01:43

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
31页	552K
描述
SMALL-OUTLINE DDR SDRAM DIMM

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中文翻译

获取价格

数据手册

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512MB, 1GB (x64)

200-PIN DDR SODIMM

MT16VDDF6464H – 512MB

MT16VDDF12864H – 1GB

SMALL-OUTLINE

ꢀ

DDR SDRAM DIMM

For the latest data sheet, please refer to the Micron Web

site: www.micron.com/moduleds

Features

Figure 1: 200-Pin SODIMM (MO-224)

•

200-pin, small-outline, dual in-line memory

module (SODIMM)

512MB Module

•

Fast data transfer rates: PC1600, PC2100, and PC2700

Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR

SDRAM components

•

512MB (64 Meg x 64), 1GB (128 Meg x 64)

VDD = VDDQ = +2.5V

VDDSPD = +2.3V to +3.6V

2.5V I/O (SSTL_2 compatible)

Commands entered on each positive CK edge

DQS edge-aligned with data for READs; center-

aligned with data for WRITEs

1GB Module

•

Internal, pipelined double data rate (DDR)

architecture; two data accesses per clock cycle

Bidirectional data strobe (DQS) transmitted/

received with data—i.e., source-synchronous data

capture

•

Differential clock inputs CK and CK#

Four internal device banks for concurrent operation

Programmable burst lengths: 2, 4, or 8

Auto precharge option

Auto Refresh and Self Refresh Modes

7.8125µs maximum average periodic refresh interval

Serial Presence Detect (SPD) with EEPROM

Programmable READ CAS latency

Gold edge contacts

OPTIONS

MARKING

•

Package

200-pin SODIMM (standard)

200-pin SODIMM (lead-free)¹

•

Frequency/CAS Latency²

167 MHz (333 MT/s) CL = 2.5

133 MHz (266 MT/s) CL = 2

133 MHz (266 MT/s) CL = 2.5

100 MHz (200 MT/s) CL = 2

-335

-262

-26A

-265

-202

NOTE: 1. Contact factory for availability of lead-free prod-

ucts.

2. CL = CAS (READ) latency.

Table 1:

Address Table

512MB

1GB

Refresh Count

8K (A0–A12)

4 (BA0, BA1)

32 Meg x 8

1K (A0–A9)

2 (S0#, S1#)

8K (A0–A12)

4 (BA0, BA1)

64 Meg x 8

Device Row Addressing

Device Bank Addressing

Device Configuration

2K (A0–A9, A11)

2 (S0#, S1#)

Device Column Addressing

Module Rank Addressing

09005aef80a646bc

DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

12 3 4 5 6 7...31

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与MT16VDDF6464HG-262相关器件

型号	品牌	获取价格	描述	数据表
MT16VDDF6464HG-265	MICRON	获取价格	SMALL-OUTLINE DDR SDRAM DIMM
MT16VDDF6464HG-26A	MICRON	获取价格	SMALL-OUTLINE DDR SDRAM DIMM
MT16VDDF6464HG-335	MICRON	获取价格	SMALL-OUTLINE DDR SDRAM DIMM
MT16VDDF6464HG-40B	MICRON	获取价格	DDR SDRAM SODIMM
MT16VDDF6464HI-335	MICRON	获取价格	DDR SDRAM SODIMM
MT16VDDF6464HY-202	MICRON	获取价格	SMALL-OUTLINE DDR SDRAM DIMM
MT16VDDF6464HY-262	MICRON	获取价格	SMALL-OUTLINE DDR SDRAM DIMM
MT16VDDF6464HY-265	MICRON	获取价格	SMALL-OUTLINE DDR SDRAM DIMM
MT16VDDF6464HY-26A	MICRON	获取价格	SMALL-OUTLINE DDR SDRAM DIMM
MT16VDDF6464HY-335	MICRON	获取价格	SMALL-OUTLINE DDR SDRAM DIMM

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