Datasheet > MSS1P3_11

MSS1P3_11

更新时间： 2024-11-26 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
4页	93K
描述
Surface Mount Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册

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MSS1P3_11 数据手册

New Product

MSS1P3, MSS1P4

Vishay General Semiconductor

Surface Mount Schottky Barrier Rectifiers

FEATURES

eSMP^®Series

• Very low profile - typical height of 0.65 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Meets MSL level 1, per J-STD-020, LF

maximum peak of 260 °C

Top View

Bottom View

• AEC-Q101 qualified

MicroSMP

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

• Halogen-free according to IEC 61249-2-21 definition

I_F(AV)

1.0 A

30 V, 40 V

25 A

MECHANICAL DATA

Case: MicroSMP

Molding compound meets UL 94 V-0 flammability rating

V_RRM

I_FSM

Base P/N-M3

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

- halogen-free, RoHS compliant, and

V_Fat I_F= 1.0 A

T_Jmax.

0.41 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MSS1P3

MSS1P4

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.41

0.48

0.32

0.41

8.5

MAX.

UNIT

I_F= 0.5 A

0.55

T_J= 25 °C

I_F= 1.0 A

I_F= 0.5 A

I_F= 1.0 A

Maximum instantaneous

forward voltage

(1)

V_F

T_J= 125 °C

0.46

200

T_J= 25 °C

μA

(2)

Maximum reverse current

Rated V_R

I_R

T_J= 125 °C

4.5

Typical junction capacitance

4.0 V, 1 MHz

C_J

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

Document Number: 89019

Revision: 19-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与MSS1P3_11相关器件

型号	品牌	获取价格	描述	数据表
MSS1P3-E3/89A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM),
MSS1P3-G3/89A	VISHAY	获取价格	DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, GREEN, PLASTIC, MICROSMP, 2 PIN, Signal Diode
MSS1P3HM3/89A	VISHAY	获取价格	DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, MICROSMP-2, Signa
MSS1P3L	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifiers
MSS1P3L_15	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifiers
MSS1P3L-E3/89A	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifiers
MSS1P3L-M3/89A	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifiers
MSS1P3U	VISHAY	获取价格	Ultra Low VF Surface Mount Schottky Barrier Rectifiers
MSS1P3U-M3/89A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM),
MSS1P4	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifiers

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