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MSS1P3U-M3/89A PDF预览

MSS1P3U-M3/89A

更新时间: 2024-02-12 21:11:12
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 89K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM),

MSS1P3U-M3/89A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.81
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.35 VJESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
Base Number Matches:1

MSS1P3U-M3/89A 数据手册

 浏览型号MSS1P3U-M3/89A的Datasheet PDF文件第2页浏览型号MSS1P3U-M3/89A的Datasheet PDF文件第3页浏览型号MSS1P3U-M3/89A的Datasheet PDF文件第4页 
New Product  
MSS1P2U, MSS1P3U  
Vishay General Semiconductor  
Ultra Low VF Surface Mount Schottky Barrier Rectifiers  
FEATURES  
eSMP® Series  
• Very low profile - typical height of 0.65 mm  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• Caution: High reverse leakage  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Top View  
Bottom View  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
MicroSMP  
The ultra low VF Schottky optimized for forward voltage drop  
with high reverse current trade-off.  
Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: MicroSMP  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
20 V, 30 V  
30 A  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
IFSM  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 1.5 A  
TJ max.  
0.30 V  
125 °C  
Polarity: Color band denotes the cathode end  
APPLICATIONS  
Application designed and qualified for hard disc driver  
where the VF performance and size are required. HTIR is not  
a concern.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MSS1P2U  
12U  
MSS1P3U  
13U  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
20  
30  
V
A
1.0  
30  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction temperature range  
Storage temperature range  
TJ  
- 55 to + 125  
- 55 to + 150  
°C  
°C  
TSTG  
Document Number: 89095  
Revision: 19-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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