Datasheet > MSPSAC8.5

MSPSAC8.5

更新时间： 2024-10-31 18:38:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	212K
描述
Trans Voltage Suppressor Diode, 500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2

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MSPSAC8.5 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-41	包装说明：	PLASTIC PACKAGE-2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.76	最小击穿电压：	9.44 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-41	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e0	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	500 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	2.5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	8.5 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MSPSAC8.5 数据手册

SAC5.0 thru SAC50, e3

500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This SAC5.0 thru SAC50 transient voltage suppressor (TVS) series rated at

500 watts provides an added rectifier element as shown in Figure 4 to

achieve low capacitance in applications for higher speed data or signal

lines. The low capacitance rating of 30 pF may be used for protecting

higher frequency applications in inductive switching environments or

electrical systems involving secondary lightning effects per IEC61000-4-5

DO-41

as well as RTCA/DO-160D or ARINC 429 for airborne avionics.

bidirectional protection is needed, two SAC devices in anti-parallel

configuration are required as shown in Figure 6. With their very fast

response time, they also provide ESD and EFT protection per IEC61000-4-

2 and IEC61000-4-4 respectively.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional low-capacitance TVS series for

flexible thru-hole mounting (for bidirectional see

Figure 6)

•

Suppresses transient up to 500 Watts Peak Pulse

Power @ 10/1000 µs

•

Low Capacitance for data-line protection to 10 MHz

•

Improved performance in low capacitance of 30 pF

Protection for aircraft fast data rate lines up to Level 3

Waveform 4 and Level 1 Waveform 5A in RTCA/DO-

160D (also see MicroNote 130) & ARINC 429 with bit

rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)

Economical plastic series in flexible axial-leaded

DO-41 package

•

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for

added 100% temperature cycle -55^oC to +125^oC

(10X) as well as surge (3X) and 24 hours HTRB

with post test V_Z& I_R

•

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1: SAC5.0 to SAC50

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

also available by adding MQ, MX, MV, or MSP

prefixes respectively to part number, e.g.

MXSAC5.0, MVSAC18, etc.

Class 2: SAC5.0 to SAC45

Class 3: SAC5.0 to SAC22

Class 4: SAC5.0 to SAC10

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance

Class 1: SAC5.0 to SAC26

•

Also available in surface mount with HSMBJ prefix

for part numbers (ex. HSMBJSAC5.0)

RoHS Compliant devices available by adding “e3”

suffix

Class 2: SAC5.0 to SAC15

Class 3: SAC5.0 to SAC7.0

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

CASE: Void Free Transfer Molded Thermosetting Plastic

epoxy meeting UL94V-0

•

Peak Pulse Power Dissipation at 25^oC: 500 Watts @

•

10/1000 μs with repetition rate of 0.01% or less*

Steady State Power Dissipation* at T_L= +75^oC: 2.5 Watts

(Lead Length = 3/8”).

TERMINATIONS: Tin-lead or RoHS Compliant annealed

matte-Tin plating readily solderable per MIL-STD-750

method 2026

Clamping Speed (0 volts to V_(BR)Min.) less than 5

nanoseconds.

Operating and Storage Temperature: -65^oC to +150^oC.

•

POLARITY: Cathode indicated by band

MARKING: Part number and cathode band

WEIGHT: 0.7 Grams (Approx.)

See package dimensions on last page

* TVS devices are not typically used for dc power dissipation and are instead operated < V_WM(rated standoff voltage) except for transients that briefly

drive the device into avalanche breakdown (V_BRto V_Cregion) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak

pulse power for unidirectional and bidirectional configurations respectively.

Microsemi

Page 1

9-12-2005 REV D

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与MSPSAC8.5相关器件

型号	品牌	获取价格	描述	数据表
MSPSAC8.5E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 8.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MSPSMAJ10	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MSPSMAJ100ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MSPSMAJ100C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSPSMAJ100CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSPSMAJ100CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSPSMAJ100CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSPSMAJ100CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSPSMAJ100E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MSPSMAJ100TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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