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MSPSMAJ110CAE3 PDF预览

MSPSMAJ110CAE3

更新时间： 2024-11-05 19:36:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
5页 555K
描述
Trans Voltage Suppressor Diode, 500W, 110V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, PLASTIC, SMAJ, 2 PIN

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MSPSMAJ110CAE3 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-214AC包装说明：R-PDSO-C2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.6Is Samacsys：N
最小击穿电压：122 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ACJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：1.56 W认证状态：Not Qualified
最大重复峰值反向电压：110 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MSPSMAJ110CAE3 数据手册

 浏览型号MSPSMAJ110CAE3的Datasheet PDF文件第2页浏览型号MSPSMAJ110CAE3的Datasheet PDF文件第3页浏览型号MSPSMAJ110CAE3的Datasheet PDF文件第4页浏览型号MSPSMAJ110CAE3的Datasheet PDF文件第5页 
SMAJ5.0 thru SMAJ170CA  
SURFACE MOUNT 500 Watt  
Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
PACKAGE  
This SMAJ5.0-170A series of surface mount 500 W Transient Voltage  
Suppressors (TVSs) protects a variety of voltage-sensitive components from  
destruction or degradation. The package outline is similar to the DO-214AB or  
DO-214AC. It is also available in a unidirectional configuration or as bidirectional  
with a C or CA suffix part number. Their response time is virtually instantaneous.  
As a result, they can be used for protection from ESD or EFT per IEC61000-4-2  
and IEC61000-4-4, or for inductive switching environments and induced RF  
protection. They can also protect from secondary lightning effects per IEC61000-  
4-5 and class levels defined herein. Microsemi also offers numerous other TVS  
DO-214AB or AC  
(SMAJ)  
products to meet higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Selections for 5.0 to 170 volts standoff voltages (VWM  
)
•
•
Economical surface mount  
Suppresses transients up to 500 watts @ 10/1000 µs  
Available in Unidirectional or as Bidirectional  
(see Figure 1)  
construction with a C or CA suffix  
•
•
Fast response  
•
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) and 24 hours HTRB with post test VZ &  
IR (in the operating direction for unidirectional or both  
directions for bidirectional)  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers.  
•
•
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
•
•
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
•
Class 1: SMAJ5.0 to SMAJ100A or CA  
Class 2: SMAJ5.0 to SMAJ51A or CA  
Class 3: SMAJ5.0 to SMAJ24A or CA  
Class 4: SMAJ5.0 to SMAJ12A or CA  
•
•
Axial-lead equivalent packages for thru-hole mounting  
available as P5KE6.8 to P5KE170CA (consult factory for  
other surface mount options)  
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
Moisture classification is Level 1 with no dry pack  
Class 1: SMAJ5.0 to SMAJ30A or CA  
Class 2: SMAJ5.0 to SMAJ16A or CA  
required per IPC/JEDEC J-STD-020B  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 500 watts at  
•
CASE: Void-free transfer molded thermosetting  
10/1000 µs (also see Fig 1,2, and 3)  
epoxy body meeting UL94V-0  
•
•
Impulse repetition rate (duty factor): 0.01%  
•
TERMINALS: Gull-wing or C-bend (modified J-bend)  
leads, Tin-Lead plated solderable per MIL-STD-750,  
method 2026  
t
clamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65ºC to +150ºC  
•
•
•
POLARITY: Cathode indicated by band. No marking  
•
•
on bi-directional devices  
Thermal resistance: 15 ºC/W junction to lead or 80ºC/W  
junction to ambient when mounted on FR4 PC board  
(1oz Cu) with recommended footprint (see last page)  
MARKING: Part number without SMA prefix (e.g.  
5.0, 5.0A, 5.0CA, 36, 36A, 36CA, etc.)  
TAPE & REEL option: Standard per EIA-481-1-A  
with 12 mm tape, 750 per 7 inch reel or 2500 per 13  
inch reel (add “TR” suffix to part number)  
WEIGHT: 0.064 grams  
See package dimension on last page  
•
•
•
Steady-State Power dissipation: 5 watts at TL = 75oC, or  
1.56 watts at TA = 25ºC when mounted on FR4 PC board  
with recommended footprint  
•
•
Forward Surge Current at 25ºC: 40 amps peak, 8.3 ms  
half-sine wave. Maximum voltage of 3.50 V  
(unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
Copyright 2002  
Microsemi  
Page 1  
6-01-2004 REV E  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12345

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MSPSMAJ110CATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 110V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSPSMAJ110CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 110V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSPSMAJ110CTR MICROSEMI

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MSPSMAJ110E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MSPSMAJ110TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MSPSMAJ11A MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MSPSMAJ11AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MSPSMAJ11ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MSPSMAJ11C MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MSPSMAJ11CA MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

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