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MSP430F4361IPNR PDF预览

MSP430F4361IPNR

更新时间: 2024-11-04 03:44:23
品牌 Logo 应用领域
德州仪器 - TI 微控制器和处理器外围集成电路装置时钟
页数 文件大小 规格书
73页 1180K
描述
MIXED SIGNAL MICROCONTROLLER

MSP430F4361IPNR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:LQFP-80针数:80
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.31.00.01Factory Lead Time:6 weeks
风险等级:0.82Is Samacsys:N
具有ADC:YES其他特性:ALSO OPERATES AT 1.8V MINIMUM SUPPLY AT 4.15 MHZ
地址总线宽度:位大小:16
边界扫描:YESCPU系列:MSP430
最大时钟频率:8 MHzDAC 通道:NO
DMA 通道:NO外部数据总线宽度:
格式:FIXED POINT集成缓存:NO
JESD-30 代码:S-PQFP-G80JESD-609代码:e4
长度:12 mm低功率模式:YES
湿度敏感等级:3DMA 通道数量:
外部中断装置数量:I/O 线路数量:48
串行 I/O 数:1端子数量:80
计时器数量:7片上数据RAM宽度:8
片上程序ROM宽度:8最高工作温度:85 °C
最低工作温度:-40 °CPWM 通道:YES
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装等效代码:QFP80,.55SQ,20封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH峰值回流温度(摄氏度):260
电源:2/3.3 V认证状态:Not Qualified
RAM(字节):1024RAM(字数):1
ROM(单词):24576ROM可编程性:FLASH
座面最大高度:1.6 mm速度:8 MHz
子类别:Microcontrollers最大压摆率:0.56 mA
最大供电电压:3.6 V最小供电电压:2.7 V
标称供电电压:3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:12 mm
uPs/uCs/外围集成电路类型:MICROCONTROLLER, RISCBase Number Matches:1

MSP430F4361IPNR 数据手册

 浏览型号MSP430F4361IPNR的Datasheet PDF文件第2页浏览型号MSP430F4361IPNR的Datasheet PDF文件第3页浏览型号MSP430F4361IPNR的Datasheet PDF文件第4页浏览型号MSP430F4361IPNR的Datasheet PDF文件第5页浏览型号MSP430F4361IPNR的Datasheet PDF文件第6页浏览型号MSP430F4361IPNR的Datasheet PDF文件第7页 
MSP430x43x1, MSP430x43x, MSP430x44x  
MIXED SIGNAL MICROCONTROLLER  
SLAS344F − JANUARY 2002 − REVISED MAY 2007  
D
D
Low Supply-Voltage Range, 1.8 V to 3.6 V  
D
D
Serial Onboard Programming,  
No External Programming Voltage Needed  
Programmable Code Protection by Security  
Fuse  
Ultralow-Power Consumption:  
− Active Mode: 280 μA at 1 MHz, 2.2 V  
− Standby Mode: 1.1 μA  
− Off Mode (RAM Retention): 0.1 μA  
Integrated LCD Driver for up to  
160 Segments  
D
D
D
D
Five Power Saving Modes  
D
Bootstrap Loader  
Wake-Up From Standby Mode in Less  
Than 6 μs  
D
Family Members Include:  
− MSP430F435, MSP430F4351 :  
§
16-Bit RISC Architecture,  
125-ns Instruction Cycle Time  
16KB+256B Flash Memory,  
512B RAM  
12-Bit A/D Converter With Internal  
Reference, Sample-and-Hold and  
Autoscan Feature  
§
− MSP430F436, MSP430F4361 :  
24KB+256B Flash Memory,  
1KB RAM  
D
D
16-Bit Timer_B With Three or Seven  
§
− MSP430F437, MSP430F4371 :  
Capture/Compare-With-Shadow Registers  
32KB+256B Flash Memory,  
1KB RAM  
− MSP430F447:  
16-Bit Timer_A With Three  
Capture/Compare Registers  
32KB+256B Flash Memory,  
1KB RAM  
− MSP430F448:  
48KB+256B Flash Memory,  
2KB RAM  
− MSP430F449:  
D
On-Chip Comparator  
D
Serial Communication Interface (USART),  
Select Asynchronous UART or  
Synchronous SPI by Software:  
− Two USARTs (USART0, USART1) —  
MSP430x44x Devices  
60KB+256B Flash Memory,  
2KB RAM  
− One USART (USART0) —  
MSP430x43x(1) Devices  
D
For Complete Module Descriptions, See  
The MSP430x4xx Family User’s Guide,  
Literature Number SLAU056  
D
D
Brownout Detector  
Supply Voltage Supervisor/Monitor With  
Programmable Level Detection  
§
’F435, ’F436, and ’F437 devices  
’F447, ’F448, and ’F449 devices  
The MSP430F43x1 devices are identical to the MSP430F43x  
devices with the exception that the ADC12 module is not  
implemented.  
description  
The Texas Instruments MSP430 family of ultralow power microcontrollers consists of several devices featuring  
different sets of peripherals targeted for various applications. The architecture, combined with five low-power  
modes, is optimized to achieve extended battery life in portable measurement applications. The device features  
a powerful 16-bit RISC CPU, 16-bit registers, and constant generators that contribute to maximum code  
efficiency. The digitally controlled oscillator (DCO) allows wake-up from low-power modes to active mode in less  
than 6 μs.  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range  
from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage  
because very small parametric changes could cause the device not to meet its published specifications. These devices have limited  
built-in ESD protection.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2002−2007, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

MSP430F4361IPNR 替代型号

型号 品牌 替代类型 描述 数据表
MSP430F436IPNR TI

完全替代

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MSP430F437IPN TI

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MSP430F435IPN TI

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