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MSMLJ75A

更新时间： 2024-11-29 10:45:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
4页 250K
描述
SURFACE MOUNT 3000 Watt Transient Voltage Suppressor

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中文翻译

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MSMLJ75A 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active包装说明：R-PDSO-J2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.31
Is Samacsys：N其他特性：HIGH RELIABILITY
最大击穿电压：92.1 V最小击穿电压：83.3 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-J2JESD-609代码：e0
湿度敏感等级：1最大非重复峰值反向功率耗散：3000 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.61 W
参考标准：MIL-19500最大重复峰值反向电压：75 V
表面贴装：YES技术：AVALANCHE
端子面层：Tin/Lead (Sn/Pb)端子形式：J BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MSMLJ75A 数据手册

 浏览型号MSMLJ75A的Datasheet PDF文件第2页浏览型号MSMLJ75A的Datasheet PDF文件第3页浏览型号MSMLJ75A的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 3000 Watt  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Available in both J-bend and Gull-wing terminations  
- Selections for 5.0 to 170 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMLJ5.0A thru MSMLJ170CA, e3  
and MSMLG5.0A thru MSMLG170CA, e3  
FEATURES  
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify  
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129  
for more details on the screening options.  
.
Axial-lead equivalent packages for thru-hole mounting available as M5KP5.0A to M5KP110CA with 5000 W  
rating, (consult factory for other surface mount options)  
.
.
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
.
.
Suppresses transients up to 3000 watts @ 10/1000 µs  
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
o
o
o
Class 1 & 2: MSML5.0A to MSML 170ACA  
Class 3: MSML5.0A to MSML150CA  
Class 4: MSML5.0A to MSML75CA  
.
.
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
o
o
o
o
Class 1: MSML5.0A to MSML170CA  
Class 2: MSML5.0A to MSML90CA  
Class 3: MSML5.0A to MSML48CA  
Class 4: MSML5.0A to MSML24CA  
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:  
o
o
o
Class 2: MSML5.0A to MSML43CA  
Class 3: MSML5.0A to MSML22CA  
Class 4: MSML5.0A to MSML10CA  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 ºC: 3000 watts at 10/1000 μs (also see Figures 1,2, and 3) with  
impulse repetition rate (duty factor) of 0.01 % or less  
.
.
.
t
(0 V to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
clamping  
Operating and Storage temperature: -65 ºC to +150 ºC  
Thermal resistance: 17.5 ºC/W junction to lead, or 77.5 ºC/W junction to ambient when mounted on FR4  
PC board (1 oz Cu) with recommended footprint Steady-State Power dissipation: 6 watts at TL = 45 ºC, or  
1.61 watts at TA = 25 ºC when mounted on FR4 PC board with recommended footprint (see page 2)  
.
.
Forward Surge at 25 ºC: 200 Amps peak impulse of 8.3 ms half-sine wave (unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01003 Rev A, June 2010  
High Reliability Product Group  
Page 1 of 4  
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中文翻译

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MSMLJ75A 替代型号

型号 品牌 替代类型 描述 数据表
MSMLJ75AE3/TR MICROSEMI

完全替代

 Trans Voltage Suppressor Diode, 3000W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MSMLJ75AE3 MICROSEMI

类似代替

 Trans Voltage Suppressor Diode, 3000W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与MSMLJ75A相关器件

型号 品牌 获取价格 描述 数据表
MSMLJ75A/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MSMLJ75AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MSMLJ75AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MSMLJ75AE3TR MICROSEMI

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 		3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN
MSMLJ75ATR MICROSEMI

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 		3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMLJ, 2 PIN
MSMLJ75CA MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 75V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSMLJ75CA/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 75V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSMLJ75CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 75V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSMLJ75CAE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 3000W, 75V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MSMLJ75CAE3TR MICROSEMI

获取价格

 		3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN

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