Datasheet > MSL049P03G

MSL049P03G

更新时间： 2024-09-18 01:25:23

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
11页	734K
描述
P-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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MSL049P03G 数据手册

MSL049P03G

P-Channel Enhancement Mode MOSFET

■ Features

■ Pin Description

• -30V/-23.8A

D D D D

R_DS(ON)= 4.9mΩ (max.) @ V_GS= -10V

R_DS(ON)= 8.2mΩ (max.) @ V_GS= -4.5V

• Super high dense cell design

• Reliable and Rugged.

• Lead free and green device available

(RoHS compliant).

• HBM ESD protection level pass 8KV.

Top View of SOP-8

Note: The diode connected between the gate and

source serves only as protection against ESD.

No gate overvoltage rating is implied.

S S S G

( 5,6,7,8 )

DDD

■ Application

• Power management in notebook computer

portable equipment and battery powered

system.

(4)

S S S

(1, 2, 3)

P- Channel MOSFET

■ Absolute Maximum Ratings (T_A= 25^OC unless otherwise specified)

Symbol

V_DSS

I_DM

PARAMETER

CONDITIONS

MSL049P03G

UNIT

Drain-Source Voltage

-30

-95

V_GS=-10V

Pulsed Drain Current(Note:1)

Gate-Source Voltage

V_GSS

I_S

±25

-5

Diode Continuous Forward Current(Note:1)

L=0.5mH

L=1mH

-36

Avalanche Current, single pulse (Note:2)

Avalanche Energy, single pulse (Note:2)

I_AS

-28

L=0.5mH

L=1mH

324

392

E_AS

t ≤ 10s

^OC/W

^OC

Thermal Resistance-Junction to Ambient(Note:1,3)

Operating and Storage Temperature Range

Maximum Power Dissipation(Note:1)

R_θJA

T_J, T_STG

P_D

Steady State

-55 ~ +150

4.2

T_A= 25^OC

T_A= 70^OC

2.7

V_GS=-10V, T_A= 25^OC

V_GS=-10V, T_A= 70^OC

Steady State

-23.8

-19

Continuous Drain Current(Note:1)

I_D

^OC/W

Thermal Resistance-Junction to Lead

R_θJL

NOTE : 1. Surface mounted on 1in²pad area, t ≤ 10sec.

2. UIS tested and pulse width limited by maximum junction temperature 150^OC (initial temperature T_J=25^OC).

3.Maximum under steady state condition is 75 ^OC/W.

Document ID : DS-22M73

Revised Date : 2016/08

Revision : C1

12 3 4 5 6 7...11

中文翻译

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