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MSKD120-16 PDF预览

MSKD120-16

更新时间: 2024-11-11 19:31:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 146K
描述
Rectifier Diode, 1 Phase, 2 Element, 120A, 1600V V(RRM), Silicon, CASE D1, 3 PIN

MSKD120-16 技术参数

生命周期:Obsolete包装说明:R-XUFM-X3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.81其他特性:UL RECOGNIZED
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-XUFM-X3
JESD-609代码:e0最大非重复峰值正向电流:2800 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:120 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1600 V
表面贴装:NO端子面层:TIN LEAD
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MSKD120-16 数据手册

 浏览型号MSKD120-16的Datasheet PDF文件第2页浏览型号MSKD120-16的Datasheet PDF文件第3页 
MSKD120 ; MSAD120 ; MSCD120  
Glass Passivated Rectifier  
Diode Modules  
VRRM 800 to 1800V  
IFAV 120 Amp  
Applications  
y
y
y
Non-controllable rectifiers for AC/AC  
converters  
Line rectifiers for transistorized AC motor  
controllers  
Field supply for DC motors  
Circuit  
Features  
y
Blocking voltage:800 to 1800V  
Heat transfer through aluminum oxide DBC  
ceramic isolated metal baseplate  
Glass passivated chip  
y
y
y
UL E243882 approved  
Module Type  
TYPE  
VRRM  
800V  
1200V  
1600V  
1800V  
VRSM  
900V  
1300V  
1700V  
1900V  
MSCD120-08  
MSCD120-12  
MSCD120-16  
MSCD120-18  
MSAD120-08  
MSAD120-12  
MSAD120-16  
MSAD120-18  
MSKD120-08  
MSKD120-12  
MSKD120-16  
MSKD120-18  
Maximum Ratings  
Symbol  
Conditions  
Values  
120  
Units  
Single phase ,half wave 180°conduction Tc=106℃  
Single phase ,half wave 180°conduction Tc=97℃  
t=10mS Tvj =45℃  
A
IFAV  
IF(RMS)  
IFSM  
i2t  
180  
A
2800  
A
A2s  
V
t=10mS Tvj =45℃  
39200  
a.c.50HZ;r.m.s.;1min  
3000  
Visol  
Tvj  
-40 to +150  
-40 to +125  
3±15%  
5±15%  
100  
Nm  
Nm  
g
Tstg  
Mt  
To terminals(M5)  
Ms  
To heatsink(M6)  
Weight  
Module (Approximately)  
Thermal Characteristics  
Symbol  
Conditions  
Values  
0.26  
Units  
/W  
Per diode  
Module  
Rth(j-c)  
Rth(c-s)  
0.1  
/W  
Electrical Characteristics  
Symbol  
Values  
Min. Typ. Max.  
Conditions  
Units  
T=25IF =300A  
Tvj=150VRD=VRRM  
1.22  
1.43  
6
V
VFM  
IRD  
mA  
MSKD120_MSAD120_MSCD120 - Rev2  
Oct, 2011  
www.microsemi.com  
1/3  

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