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MSC81350M PDF预览

MSC81350M

更新时间: 2024-11-28 22:51:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频双极晶体管开关微波电子航空局域网
页数 文件大小 规格书
5页 78K
描述
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MSC81350M 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, S-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.3Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:BASE
最大集电极电流 (IC):19.8 A配置:SINGLE
最小直流电流增益 (hFE):15最高频带:L BAND
JESD-30 代码:S-CDFM-F2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):720 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MSC81350M 数据手册

 浏览型号MSC81350M的Datasheet PDF文件第2页浏览型号MSC81350M的Datasheet PDF文件第3页浏览型号MSC81350M的Datasheet PDF文件第4页浏览型号MSC81350M的Datasheet PDF文件第5页 
MSC81350M  
RF & MICROWAVE TRANSISTORS  
AVIONICS APPLICATIONS  
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION  
RUGGEDIZED VSWR 20:1  
INTERNAL INPUT/OUTPUT MATCHING  
LOW THERMAL RESISTANCE  
METAL/CERAMIC HERMETIC PACKAGE  
POUT = 350 W MIN. WITH 7.0 dB GAIN  
.400 x .400 2NLFL (S042)  
hermetically sealed  
ORDER CODE  
BRANDING  
81350M  
MSC81350M  
PIN CONNECTION  
DESCRIPTION  
The MSC81350M device is a high power pulsed  
transistor specifically designed for IFF avionics  
applications.  
This device is capable of withstanding a minimum  
20:1 load VSWR at any phase angle under full  
rated conditions. Low RF thermal resistance and  
semi automatic wire bonding techniques ensure  
high reliability and product consistency.  
The MSC81350M is housed in the unique  
1. Collector  
2. Base  
3. Emitter  
4. Base  
AMPAC  
package with internal input/output  
matching structures.  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
720  
19.8  
55  
Unit  
Power Dissipation*  
Device Current*  
(TC 55°C)  
W
A
VCC  
TJ  
Collector-Supply Voltage*  
V
°
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
C
C
°
TSTG  
65 to +200  
THERMAL DATA  
°
C/W  
RTH(j-c)  
Junction-Case Thermal Resistance*  
0.20  
*Applies only to rated RF amplifier operation  
1/5  
October 1992  

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