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MS1533 PDF预览

MS1533

更新时间: 2024-11-03 20:17:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网放大器晶体管
页数 文件大小 规格书
3页 92K
描述
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M175, 4 PIN

MS1533 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:M175, 4 PIN针数:4
Reach Compliance Code:unknown风险等级:5.13
Is Samacsys:N外壳连接:EMITTER
最大集电极电流 (IC):25 A基于收集器的最大容量:100 pF
集电极-发射极最大电压:30 V配置:Single
最小直流电流增益 (hFE):15最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):310 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MS1533 数据手册

 浏览型号MS1533的Datasheet PDF文件第2页浏览型号MS1533的Datasheet PDF文件第3页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1533  
RF & MICROWAVE TRANSISTORS  
TV/LINEAR APPLICATIONS  
Features  
·
·
·
·
·
·
·
470 - 860 MHz  
28 VOLTS  
INTERNAL INPUT MATCHING  
CLASS AB LINEAR  
POUT = 150 WATTS  
GP = 6.5 dB MINIMUM  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1533 is a gold metallized epitaxial silicon NPN planar  
transistor designed for high linearity Class AB operation in UHF  
and Band IV, V television transmitters and transposers.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
Parameter  
Value  
Unit  
V
VCBO  
Collector-Base Voltage  
60  
VEBO  
VCEO  
PDISS  
IC  
Emitter-Base Voltage  
Collector-Emitter Voltage  
Power Dissipation  
3.0  
30  
310  
25  
V
V
W
A
Device Current  
TJ  
Junction Temperature  
Storage Temperature  
+200  
°C  
°C  
TSTG  
-65 to +150  
Thermal Data  
RTH(J-C)  
Thermal Resistance Junction-case  
.55  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  

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