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MRFG35010R1 PDF预览

MRFG35010R1

更新时间: 2024-01-05 07:50:11
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页数 文件大小 规格书
11页 368K
描述
Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35010R1 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PDFM-F2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.05
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:15 V
FET 技术:HIGH ELECTRON MOBILITY最高频带:S BAND
JESD-30 代码:R-PDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:28.3 W认证状态:Not Qualified
子类别:FET RF Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

MRFG35010R1 数据手册

 浏览型号MRFG35010R1的Datasheet PDF文件第5页浏览型号MRFG35010R1的Datasheet PDF文件第6页浏览型号MRFG35010R1的Datasheet PDF文件第7页浏览型号MRFG35010R1的Datasheet PDF文件第8页浏览型号MRFG35010R1的Datasheet PDF文件第9页浏览型号MRFG35010R1的Datasheet PDF文件第10页 
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Rev. 9,1/2008

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