MQR5KP90CATR

更新时间： 2024-11-24 04:47:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管瞬态抑制器
页数	文件大小	规格书
4页	223K
描述
Trans Voltage Suppressor Diode, 5000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, 5R, 2 PIN

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MQR5KP90CATR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	PLASTIC, 5R, 2 PIN	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.82
最大击穿电压：	111 V	最小击穿电压：	100 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PBCY-W2
JESD-609代码：	e0	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	5000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大功率耗散：	1.56 W	认证状态：	Not Qualified
参考标准：	MIL-19500	最大重复峰值反向电压：	90 V
表面贴装：	NO	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	WIRE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MQR5KP90CATR 数据手册

5KP5.0 thru 5KP110CA, e3

5000 W TRANSIENT VOLTAGE

SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These Microsemi 5 kW Transient Voltage Suppressors (TVSs) are designed

for applications requiring protection of voltage-sensitive electronic devices

that may be damaged by harsh or severe voltage transients including

lightning per IEC61000-4-5 and classes with various source impedances

described herein. This series is available in 5.0 to 110 volt standoff voltages

(V_WM) in both unidirectional and bidirectional offered in two different package

designs for axial and radial configurations. Microsemi also offers numerous

other TVS products to meet higher and lower power demands and special

applications.

CASE 5A

(DO-204AR)

CASE

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Available in both Unidirectional and Bidirectional

construction (Bidirectional with C or CA suffix)

• Protection from switching transients and induced RF

• Fast response

Available in both axial-leaded and radial packages

(include R prefix in part number for radial package option

shown in figure as “case 5R,” e.g. R5KP5.0A)

• Protection from ESD, and EFT per IEC 61000-4-2

and IEC 61000-4-4

• Secondary lightning protection per IEC61000-4-5

•

Selections for 5.0 to 110 volts standoff voltages (V_WM)

with 42 Ohms source impedance:

Suppresses transients up to 5000 watts @ 10/1000 µs

and 34,000 watts @ 8/20 µs (see Figure 1)

Class 1,2,3,4: 5KP5.0A to 5KP110A or CA

Class 5: 5KP5.0A to 5KP110A or CA (short distance)

Class 5: 5KP5.0A to 5KP36A or CA (long distance)

•

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z&

I_R(in the operating direction for unidirectional or both

directions for bidirectional)

• Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

Class 1 & 2: 5KP5.0A to 5KP110A or CA

Class 3: 5KP5.0A to 5KP78A or CA

Class 4: 5KP5.0A to 5KP40A or CA

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are also available

by adding MQ, MX or MV prefixes respectively to part

numbers.

• Secondary lightning protection per IEC61000-4-5

with 2 Ohms source impedance:

Class 2: 5KP5.0A to 5KP70A or CA

Class 3: 5KP5.0 to 5KP36A or CA

Class 4: 5KP5.0 to 5KP18A or CA

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Peak Pulse Power dissipation at 25^ºC: 5000 watts at

10/1000 μs (also see Figures 1 and 2)

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

• Impulse repetition rate (duty factor): 0.05%

TERMINALS: Tin-Lead or RoHS compliant

annealed matte-Tin plating readily solderable per

MIL-STD-750, method 2026

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

• Operating and Storage temperature: -65^ºC to +150^ºC

•

MARKING: Body marked with part number

• Thermal resistance: 20^ºC/W junction to lead, or 80^ºC/W

junction to ambient when mounted on FR4 PC board

with 4 mm²copper pads (1oz) and track width 1 mm,

length 25 mm

POLARITY: Band denotes cathode for the axial-

leaded package and a dot denotes cathode terminal

for the radial package. Bidirectional not marked for

polarity

• Steady-State Power dissipation: 6 watts at T_L= 30^oC,

or 1.56 watts at T_A= 25^ºC when mounted on FR4 PC

board described for thermal resistance

•

WEIGHT: 1.4 grams (approximate)

TAPE & Reel: Standard per EIA-296 for axial

package (add “TR” suffix to part number)

• Forward Surge Voltage: 3.5 V maximum @ 100 Amps

•

See package dimensions on last page

8.3 ms half-sine wave (unidirectional devices only)

• Solder temperatures: 260 ^ºC for 10 s (maximum)

9-11-2007 REV H

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

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与MQR5KP90CATR相关器件

型号	品牌	获取价格	描述	数据表
MQR5KP90CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
MQR5KP90CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
MQR5KP90CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
MQR5KP90E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 90V V(RWM), Unidirectional, 1 Element, Silicon, ROH
MQR5KP90E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 90V V(RWM), Unidirectional, 1 Element, Silicon, PLA
MQRT100KP100A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Unidirectional, 1 Element, Silicon,
MQRT100KP100AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Unidirectional, 1 Element, Silicon,
MQRT100KP100CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, P
MQRT100KP100CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, R
MQRT100KP100E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Unidirectional, 1 Element, Silicon,

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