是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | PLASTIC PACKAGE-2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.26 |
最大击穿电压: | 123 V | 最小击穿电压: | 111 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 100000 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.61 W |
认证状态: | Not Qualified | 参考标准: | MIL-19500 |
最大重复峰值反向电压: | 100 V | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MQRT100KP100CAE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, R | |
MQRT100KP100E3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, | |
MQRT100KP100TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, | |
MQRT100KP110 | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, | |
MQRT100KP110A | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, | |
MQRT100KP110AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, | |
MQRT100KP110ATR | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, | |
MQRT100KP110C | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, P | |
MQRT100KP110CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, P | |
MQRT100KP110CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, R |